Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the end of PECVD process when a thick oxide layer already covers and insulates the metal lines. The damage occurs during a plasma power ramp down (PPRD) step. The simultaneous presence of elevated temperatures, UV light, a large perimeter conductor and a highly non uniform plasma during PPRD step, causes the damage of gate oxide.
|Number of pages||5|
|Publication status||Published - 25 Nov 2003|
|Event||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands|
Duration: 25 Nov 2003 → 26 Nov 2003
Conference number: 6
|Conference||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003|
|Period||25/11/03 → 26/11/03|
- Plasma Enhanced Chemical Vapour Deposition (PECVD)
- Plasma charging damage
- Gate oxide
Wang, Z., Ackaert, J., Salm, C., Kuper, F. G., Bessemans, K., & de Backer, E. (2003). "Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process. 766-770. Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands.