"Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process

Zhichun Wang, Jan Ackaert, Cora Salm, F.G. Kuper, Klara Bessemans, Eddy de Backer

Research output: Contribution to conferencePaperAcademic

Abstract

Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the end of PECVD process when a thick oxide layer already covers and insulates the metal lines. The damage occurs during a plasma power ramp down (PPRD) step. The simultaneous presence of elevated temperatures, UV light, a large perimeter conductor and a highly non uniform plasma during PPRD step, causes the damage of gate oxide.
Original languageUndefined
Pages766-770
Number of pages5
Publication statusPublished - 25 Nov 2003
Event6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands
Duration: 25 Nov 200326 Nov 2003
Conference number: 6

Conference

Conference6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Abbreviated titleSAFE
CountryNetherlands
CityVeldhoven
Period25/11/0326/11/03

Keywords

  • Plasma Enhanced Chemical Vapour Deposition (PECVD)
  • Plasma charging damage
  • Gate oxide
  • IR-67746
  • EWI-15569

Cite this

Wang, Z., Ackaert, J., Salm, C., Kuper, F. G., Bessemans, K., & de Backer, E. (2003). "Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process. 766-770. Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands.
Wang, Zhichun ; Ackaert, Jan ; Salm, Cora ; Kuper, F.G. ; Bessemans, Klara ; de Backer, Eddy. / "Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process. Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands.5 p.
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abstract = "Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the end of PECVD process when a thick oxide layer already covers and insulates the metal lines. The damage occurs during a plasma power ramp down (PPRD) step. The simultaneous presence of elevated temperatures, UV light, a large perimeter conductor and a highly non uniform plasma during PPRD step, causes the damage of gate oxide.",
keywords = "Plasma Enhanced Chemical Vapour Deposition (PECVD), Plasma charging damage, Gate oxide, IR-67746, EWI-15569",
author = "Zhichun Wang and Jan Ackaert and Cora Salm and F.G. Kuper and Klara Bessemans and {de Backer}, Eddy",
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Wang, Z, Ackaert, J, Salm, C, Kuper, FG, Bessemans, K & de Backer, E 2003, '"Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process' Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands, 25/11/03 - 26/11/03, pp. 766-770.

"Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process. / Wang, Zhichun; Ackaert, Jan; Salm, Cora; Kuper, F.G.; Bessemans, Klara; de Backer, Eddy.

2003. 766-770 Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands.

Research output: Contribution to conferencePaperAcademic

TY - CONF

T1 - "Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process

AU - Wang, Zhichun

AU - Ackaert, Jan

AU - Salm, Cora

AU - Kuper, F.G.

AU - Bessemans, Klara

AU - de Backer, Eddy

PY - 2003/11/25

Y1 - 2003/11/25

N2 - Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the end of PECVD process when a thick oxide layer already covers and insulates the metal lines. The damage occurs during a plasma power ramp down (PPRD) step. The simultaneous presence of elevated temperatures, UV light, a large perimeter conductor and a highly non uniform plasma during PPRD step, causes the damage of gate oxide.

AB - Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the end of PECVD process when a thick oxide layer already covers and insulates the metal lines. The damage occurs during a plasma power ramp down (PPRD) step. The simultaneous presence of elevated temperatures, UV light, a large perimeter conductor and a highly non uniform plasma during PPRD step, causes the damage of gate oxide.

KW - Plasma Enhanced Chemical Vapour Deposition (PECVD)

KW - Plasma charging damage

KW - Gate oxide

KW - IR-67746

KW - EWI-15569

M3 - Paper

SP - 766

EP - 770

ER -

Wang Z, Ackaert J, Salm C, Kuper FG, Bessemans K, de Backer E. "Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process. 2003. Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands.