Plasma Damage in Floating Metal-Insulator-Metal Capacitors

Jan Ackaert, Zhichun Wang, E. Backer, P. Coppens

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMCs with long interconnects.
    Original languageEnglish
    Title of host publication8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001)
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages224-227
    Number of pages4
    ISBN (Print)0-7803-6675-1
    DOIs
    Publication statusPublished - 9 Jul 2001
    Event8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001 - Singapore, Singapore
    Duration: 9 Jul 200113 Jul 2001
    Conference number: 8

    Conference

    Conference8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001
    Abbreviated titleIPFA
    CountrySingapore
    CitySingapore
    Period9/07/0113/07/01

    Keywords

    • METIS-200756

    Fingerprint Dive into the research topics of 'Plasma Damage in Floating Metal-Insulator-Metal Capacitors'. Together they form a unique fingerprint.

    Cite this