Plasma Damage in Floating Metal-Insulator-Metal Capacitors

Jan Ackaert; Zhichun Wang; E. Backer; P. Coppens

doi:10.1109/IPFA.2001.941491

Plasma Damage in Floating Metal-Insulator-Metal Capacitors

Jan Ackaert, Zhichun Wang, E. Backer, P. Coppens

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

5 Downloads (Pure)

Abstract

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMCs with long interconnects.

Original language	English
Title of host publication	8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	224-227
Number of pages	4
ISBN (Print)	0-7803-6675-1
DOIs	https://doi.org/10.1109/IPFA.2001.941491
Publication status	Published - 9 Jul 2001
Event	8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001 - Singapore, Singapore Duration: 9 Jul 2001 → 13 Jul 2001 Conference number: 8

Conference

Conference	8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001
Abbreviated title	IPFA
Country/Territory	Singapore
City	Singapore
Period	9/07/01 → 13/07/01

Keywords

METIS-200756

Access to Document

10.1109/IPFA.2001.941491

Cite this

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title = "Plasma Damage in Floating Metal-Insulator-Metal Capacitors",

abstract = "In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMCs with long interconnects.",

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author = "Jan Ackaert and Zhichun Wang and E. Backer and P. Coppens",

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doi = "10.1109/IPFA.2001.941491",

language = "English",

isbn = "0-7803-6675-1",

pages = "224--227",

booktitle = "8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001)",

publisher = "IEEE",

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note = "8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001, IPFA ; Conference date: 09-07-2001 Through 13-07-2001",

}

Ackaert, J, Wang, Z, Backer, E & Coppens, P 2001, Plasma Damage in Floating Metal-Insulator-Metal Capacitors. in 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001). IEEE, Piscataway, NJ, pp. 224-227, 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001, Singapore, Singapore, 9/07/01. https://doi.org/10.1109/IPFA.2001.941491

TY - GEN

T1 - Plasma Damage in Floating Metal-Insulator-Metal Capacitors

AU - Ackaert, Jan

AU - Wang, Zhichun

AU - Backer, E.

AU - Coppens, P.

N1 - Conference code: 8

PY - 2001/7/9

Y1 - 2001/7/9

N2 - In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMCs with long interconnects.

AB - In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMCs with long interconnects.

KW - METIS-200756

U2 - 10.1109/IPFA.2001.941491

DO - 10.1109/IPFA.2001.941491

M3 - Conference contribution

SN - 0-7803-6675-1

SP - 224

EP - 227

BT - 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001)

PB - IEEE

CY - Piscataway, NJ

T2 - 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001

Y2 - 9 July 2001 through 13 July 2001

ER -

Plasma Damage in Floating Metal-Insulator-Metal Capacitors

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