Plasma-enhanced chemical vapor deposition of silicon dioxide : optimizing dielectric films through plasma characterization

A. Boogaard

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    312 Downloads (Pure)

    Abstract

    The fabrication of electronic devices at relatively low temperatures (100-150°C) is becoming increasingly important. It is possible to fabricate devices on glass or polymer substrates at low temperatures, or one can add extra functionality to standard ICs through post-processing. In order to realize good devices, we need to fabricate high-electrical quality dielectrics and semiconductors, which is a challenge at such low temperatures. Plasma-enhanced chemical vapor deposition allows SiO2 films to deposit at temperatures of around 400°C and lower. It is an experimental fact, however, that a low deposition temperature results in a degradation of the film properties. This degradation can be minimized partly by using high-density remote plasma (HDRP) reactors, as these reactors are capable of operating at lower pressures, thereby reducing gas-phase nucleation. They can also maintain higher plasma densities, thus enabling a higher rate of electron-stimulated reactions.
    Original languageUndefined
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Wolters, Robertus Adrianus Maria, Supervisor
    • Kovalgin, Alexey Y., Advisor
    Thesis sponsors
    Award date12 Jan 2011
    Place of PublicationEnschede
    Publisher
    Print ISBNs978-90-365-3130-6
    DOIs
    Publication statusPublished - 12 Jan 2011

    Keywords

    • EWI-19348
    • SC-ICF: Integrated Circuit Fabrication
    • METIS-277495
    • IR-75577

    Cite this

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    title = "Plasma-enhanced chemical vapor deposition of silicon dioxide : optimizing dielectric films through plasma characterization",
    abstract = "The fabrication of electronic devices at relatively low temperatures (100-150°C) is becoming increasingly important. It is possible to fabricate devices on glass or polymer substrates at low temperatures, or one can add extra functionality to standard ICs through post-processing. In order to realize good devices, we need to fabricate high-electrical quality dielectrics and semiconductors, which is a challenge at such low temperatures. Plasma-enhanced chemical vapor deposition allows SiO2 films to deposit at temperatures of around 400°C and lower. It is an experimental fact, however, that a low deposition temperature results in a degradation of the film properties. This degradation can be minimized partly by using high-density remote plasma (HDRP) reactors, as these reactors are capable of operating at lower pressures, thereby reducing gas-phase nucleation. They can also maintain higher plasma densities, thus enabling a higher rate of electron-stimulated reactions.",
    keywords = "EWI-19348, SC-ICF: Integrated Circuit Fabrication, METIS-277495, IR-75577",
    author = "A. Boogaard",
    note = "10.3990/1.9789036531306",
    year = "2011",
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    doi = "10.3990/1.9789036531306",
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    publisher = "Ipskamp Printing",
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    school = "University of Twente",

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    Plasma-enhanced chemical vapor deposition of silicon dioxide : optimizing dielectric films through plasma characterization. / Boogaard, A.

    Enschede : Ipskamp Printing, 2011. 186 p.

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    TY - THES

    T1 - Plasma-enhanced chemical vapor deposition of silicon dioxide : optimizing dielectric films through plasma characterization

    AU - Boogaard, A.

    N1 - 10.3990/1.9789036531306

    PY - 2011/1/12

    Y1 - 2011/1/12

    N2 - The fabrication of electronic devices at relatively low temperatures (100-150°C) is becoming increasingly important. It is possible to fabricate devices on glass or polymer substrates at low temperatures, or one can add extra functionality to standard ICs through post-processing. In order to realize good devices, we need to fabricate high-electrical quality dielectrics and semiconductors, which is a challenge at such low temperatures. Plasma-enhanced chemical vapor deposition allows SiO2 films to deposit at temperatures of around 400°C and lower. It is an experimental fact, however, that a low deposition temperature results in a degradation of the film properties. This degradation can be minimized partly by using high-density remote plasma (HDRP) reactors, as these reactors are capable of operating at lower pressures, thereby reducing gas-phase nucleation. They can also maintain higher plasma densities, thus enabling a higher rate of electron-stimulated reactions.

    AB - The fabrication of electronic devices at relatively low temperatures (100-150°C) is becoming increasingly important. It is possible to fabricate devices on glass or polymer substrates at low temperatures, or one can add extra functionality to standard ICs through post-processing. In order to realize good devices, we need to fabricate high-electrical quality dielectrics and semiconductors, which is a challenge at such low temperatures. Plasma-enhanced chemical vapor deposition allows SiO2 films to deposit at temperatures of around 400°C and lower. It is an experimental fact, however, that a low deposition temperature results in a degradation of the film properties. This degradation can be minimized partly by using high-density remote plasma (HDRP) reactors, as these reactors are capable of operating at lower pressures, thereby reducing gas-phase nucleation. They can also maintain higher plasma densities, thus enabling a higher rate of electron-stimulated reactions.

    KW - EWI-19348

    KW - SC-ICF: Integrated Circuit Fabrication

    KW - METIS-277495

    KW - IR-75577

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    DO - 10.3990/1.9789036531306

    M3 - PhD Thesis - Research UT, graduation UT

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    PB - Ipskamp Printing

    CY - Enschede

    ER -