Plasma-enhanced chemical vapor deposition of silicon dioxide : optimizing dielectric films through plasma characterization

A. Boogaard

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    808 Downloads (Pure)

    Abstract

    The fabrication of electronic devices at relatively low temperatures (100-150°C) is becoming increasingly important. It is possible to fabricate devices on glass or polymer substrates at low temperatures, or one can add extra functionality to standard ICs through post-processing. In order to realize good devices, we need to fabricate high-electrical quality dielectrics and semiconductors, which is a challenge at such low temperatures. Plasma-enhanced chemical vapor deposition allows SiO2 films to deposit at temperatures of around 400°C and lower. It is an experimental fact, however, that a low deposition temperature results in a degradation of the film properties. This degradation can be minimized partly by using high-density remote plasma (HDRP) reactors, as these reactors are capable of operating at lower pressures, thereby reducing gas-phase nucleation. They can also maintain higher plasma densities, thus enabling a higher rate of electron-stimulated reactions.
    Original languageUndefined
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Wolters, Robertus Adrianus Maria, Supervisor
    • Kovalgin, Alexey Y., Advisor
    Thesis sponsors
    Award date12 Jan 2011
    Place of PublicationEnschede
    Publisher
    Print ISBNs978-90-365-3130-6
    DOIs
    Publication statusPublished - 12 Jan 2011

    Keywords

    • EWI-19348
    • SC-ICF: Integrated Circuit Fabrication
    • METIS-277495
    • IR-75577

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