Plasma-enhanced chemical vapor deposition of silicon dioxide: optimizing dielectric films through plasma characterization

The fabrication of electronic devices at relatively low temperatures (100-150°C) is becoming increasingly important. It is possible to fabricate devices on glass or polymer substrates at low temperatures, or one can add extra functionality to standard ICs through post-processing. In order to realize good devices, we need to fabricate high-electrical quality dielectrics and semiconductors, which is a challenge at such low temperatures. Plasma-enhanced chemical vapor deposition allows SiO2 films to deposit at temperatures of around 400°C and lower. It is an experimental fact, however, that a low deposition temperature results in a degradation of the film properties. This degradation can be minimized partly by using high-density remote plasma (HDRP) reactors, as these reactors are capable of operating at lower pressures, thereby reducing gas-phase nucleation. They can also maintain higher plasma densities, thus enabling a higher rate of electron-stimulated reactions.