Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

Kerstin Worhoff, A. Driessen, Paul Lambeck, L.T.H. Hilderink, Petrus W.C. Linders, T.J.A. Popma

  • 104 Citations

Abstract

Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer parameters. The optical losses of slab-type waveguides is determined to be as low as 0.2 dB/cm at 632.8 nm wavelength. Due to absorption of N–H and Si–H vibrational overtones, the optical losses in the third telecommunication window, around 1550 nm, is increased to about 2 dBrcm for low index layers. By an anneal step, however, the hydrogen content of the films can be reduced as is confirmed by IR-spectroscopy and the optical losses decrease to below 0.2 dB/cm. Based on the optimized PECVD SiON technology, a layer structure fulfilling the strong requirements of telecommunication devices, is designed for operation at 1550 nm wavelength. This structure, consisting of a SiON core layer (n=1.4857) surrounded by thick oxide cladding layers (n=1.4637), has the potential for realization of channel waveguides allowing for low-loss bends with a small bending radius and high fiber-to-chip coupling efficiency.
Original languageUndefined
Pages (from-to)9-12
Number of pages4
JournalSensors and actuators. A: Physical
Volume74
Issue number1-3
DOIs
StatePublished - 20 Apr 1999

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Optical losses
Plasma enhanced chemical vapor deposition
Telecommunication
Waveguides
Wavelength
Infrared spectroscopy
Refractive index
Silicon
Hydrogen
Oxides
Fibers

Keywords

  • IOMS-MIS: MISCELLANEOUS
  • Telecommunication
  • EWI-20878
  • IR-74007
  • Silicon oxynitride
  • PECVD
  • METIS-112143
  • Process optimization

Cite this

Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A. / Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics.

In: Sensors and actuators. A: Physical, Vol. 74, No. 1-3, 20.04.1999, p. 9-12.

Research output: Scientific - peer-reviewArticle

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abstract = "Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer parameters. The optical losses of slab-type waveguides is determined to be as low as 0.2 dB/cm at 632.8 nm wavelength. Due to absorption of N–H and Si–H vibrational overtones, the optical losses in the third telecommunication window, around 1550 nm, is increased to about 2 dBrcm for low index layers. By an anneal step, however, the hydrogen content of the films can be reduced as is confirmed by IR-spectroscopy and the optical losses decrease to below 0.2 dB/cm. Based on the optimized PECVD SiON technology, a layer structure fulfilling the strong requirements of telecommunication devices, is designed for operation at 1550 nm wavelength. This structure, consisting of a SiON core layer (n=1.4857) surrounded by thick oxide cladding layers (n=1.4637), has the potential for realization of channel waveguides allowing for low-loss bends with a small bending radius and high fiber-to-chip coupling efficiency.",
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Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics. / Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

In: Sensors and actuators. A: Physical, Vol. 74, No. 1-3, 20.04.1999, p. 9-12.

Research output: Scientific - peer-reviewArticle

TY - JOUR

T1 - Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

AU - Worhoff,Kerstin

AU - Driessen,A.

AU - Lambeck,Paul

AU - Hilderink,L.T.H.

AU - Linders,Petrus W.C.

AU - Popma,T.J.A.

PY - 1999/4/20

Y1 - 1999/4/20

N2 - Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer parameters. The optical losses of slab-type waveguides is determined to be as low as 0.2 dB/cm at 632.8 nm wavelength. Due to absorption of N–H and Si–H vibrational overtones, the optical losses in the third telecommunication window, around 1550 nm, is increased to about 2 dBrcm for low index layers. By an anneal step, however, the hydrogen content of the films can be reduced as is confirmed by IR-spectroscopy and the optical losses decrease to below 0.2 dB/cm. Based on the optimized PECVD SiON technology, a layer structure fulfilling the strong requirements of telecommunication devices, is designed for operation at 1550 nm wavelength. This structure, consisting of a SiON core layer (n=1.4857) surrounded by thick oxide cladding layers (n=1.4637), has the potential for realization of channel waveguides allowing for low-loss bends with a small bending radius and high fiber-to-chip coupling efficiency.

AB - Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer parameters. The optical losses of slab-type waveguides is determined to be as low as 0.2 dB/cm at 632.8 nm wavelength. Due to absorption of N–H and Si–H vibrational overtones, the optical losses in the third telecommunication window, around 1550 nm, is increased to about 2 dBrcm for low index layers. By an anneal step, however, the hydrogen content of the films can be reduced as is confirmed by IR-spectroscopy and the optical losses decrease to below 0.2 dB/cm. Based on the optimized PECVD SiON technology, a layer structure fulfilling the strong requirements of telecommunication devices, is designed for operation at 1550 nm wavelength. This structure, consisting of a SiON core layer (n=1.4857) surrounded by thick oxide cladding layers (n=1.4637), has the potential for realization of channel waveguides allowing for low-loss bends with a small bending radius and high fiber-to-chip coupling efficiency.

KW - IOMS-MIS: MISCELLANEOUS

KW - Telecommunication

KW - EWI-20878

KW - IR-74007

KW - Silicon oxynitride

KW - PECVD

KW - METIS-112143

KW - Process optimization

U2 - 10.1016/S0924-4247(98)00325-2

DO - 10.1016/S0924-4247(98)00325-2

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JO - Sensors and actuators. A: Physical

T2 - Sensors and actuators. A: Physical

JF - Sensors and actuators. A: Physical

SN - 0924-4247

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ER -