Plasma-induced damage of multilayer coatings in EUVL

R. C. Wieggers*, W. J. Goedheer, E. Louis, F. Bijkerk

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)
4 Downloads (Pure)

Abstract

A Particle-in-Cell Monte Carlo model is used to simulate extreme ultraviolet driven plasma. In an extreme ultraviolet lithography tool, photons of a pulsed discharge source will ionize a low pressure argon gas by photoionization. Together with the photoelectric effect, this results in a strongly time dependent and low density plasma, which is potentially dangerous to the optical elements, the collector in particular. Plasma sheaths will develop and ions are accelerated towards the collector, which might lead to sputtering. A spherical geometry is used to study the plasma between the point source and collector. Simulations are performed to study the influence of background pressure and source intensity on the damage to the collector by sputtering.

Original languageEnglish
Title of host publicationDamage to VUV, EUV, and X-ray Optics
DOIs
Publication statusPublished - 21 Nov 2007
Externally publishedYes
EventDamage to VUV, EUV, and X-ray Optics 2007 - Prague, Czech Republic
Duration: 18 Apr 200719 Apr 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6586
ISSN (Print)0277-786X

Conference

ConferenceDamage to VUV, EUV, and X-ray Optics 2007
CountryCzech Republic
CityPrague
Period18/04/0719/04/07

Keywords

  • Collector
  • EUV
  • Lithography
  • Multilayer
  • PIC

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