Plasma nitridation optimization for sub-15 A gate dielectrics

F.N. Cubaynes, J. Schmitz, C. van der Marel, J.H.M. Snijders, A. Veloso, A. Rothschild, C. Olsen, L. Date

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    Abstract

    The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=N-Si bonding configuration is observed when no PNA is applied after the plasma nitridation. The EOT reduction due to an increase of N in the film is not a monotonic increasing function of the DPN time. It seems that there is an optimum N concentration for a given thickness of the base oxide that enables the continued down scaling of DPN base dielectrics.
    Original languageEnglish
    Title of host publicationSilicon Nitride and Silicon Dioxide Thin Insulating Films VII
    Subtitle of host publicationProceedings of the International Symposium
    EditorsRam Ekwal Sah
    Place of PublicationPennington, NJ
    PublisherThe Electrochemical Society Inc.
    Pages595-604
    Number of pages10
    Volume2
    ISBN (Print)9781566773478
    Publication statusPublished - 2003
    Event7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003: European Electrochemical Society Meeting E-ECS 2003 - Paris, France
    Duration: 28 Apr 20032 May 2003
    Conference number: 7

    Publication series

    NameElectrochemical Society Proceedings
    PublisherThe Electrochemical Society
    Volume2003-02

    Conference

    Conference7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003
    CountryFrance
    CityParis
    Period28/04/032/05/03

    Keywords

    • Miniaturization
    • Ultrathin films
    • X-ray photoelectron spectra
    • n type semiconductor

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