Abstract
The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=N-Si bonding configuration is observed when no PNA is applied after the plasma nitridation. The EOT reduction due to an increase of N in the film is not a monotonic increasing function of the DPN time. It seems that there is an optimum N concentration for a given thickness of the base oxide that enables the continued down scaling of DPN base dielectrics.
Original language | English |
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Title of host publication | Silicon Nitride and Silicon Dioxide Thin Insulating Films VII |
Subtitle of host publication | Proceedings of the International Symposium |
Editors | Ram Ekwal Sah |
Place of Publication | Pennington, NJ |
Publisher | The Electrochemical Society Inc. |
Pages | 595-604 |
Number of pages | 10 |
Volume | 2 |
ISBN (Print) | 9781566773478 |
Publication status | Published - 2003 |
Event | 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003: European Electrochemical Society Meeting E-ECS 2003 - Paris, France Duration: 28 Apr 2003 → 2 May 2003 Conference number: 7 |
Publication series
Name | Electrochemical Society Proceedings |
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Publisher | The Electrochemical Society |
Volume | 2003-02 |
Conference
Conference | 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003 |
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Country/Territory | France |
City | Paris |
Period | 28/04/03 → 2/05/03 |
Keywords
- Miniaturization
- Ultrathin films
- X-ray photoelectron spectra
- n type semiconductor