Plasma nitridation optimization for sub-15 A gate dielectrics

F.N. Cubaynes; J. Schmitz; C. van der Marel; J.H.M. Snijders; A. Veloso; A. Rothschild; C. Olsen; L. Date

Plasma nitridation optimization for sub-15 A gate dielectrics

F.N. Cubaynes
, J. Schmitz
, C. van der Marel
, J.H.M. Snijders
, A. Veloso
, A. Rothschild
, C. Olsen
, L. Date

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=N-Si bonding configuration is observed when no PNA is applied after the plasma nitridation. The EOT reduction due to an increase of N in the film is not a monotonic increasing function of the DPN time. It seems that there is an optimum N concentration for a given thickness of the base oxide that enables the continued down scaling of DPN base dielectrics.

Original language	English
Title of host publication	Silicon Nitride and Silicon Dioxide Thin Insulating Films VII
Subtitle of host publication	Proceedings of the International Symposium
Editors	Ram Ekwal Sah
Place of Publication	Pennington, NJ
Publisher	Electrochemical Society
Pages	595-604
Number of pages	10
Volume	2
ISBN (Print)	9781566773478
Publication status	Published - 2003
Event	7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003: European Electrochemical Society Meeting E-ECS 2003 - Paris, France Duration: 28 Apr 2003 → 2 May 2003 Conference number: 7

Publication series

Name	Electrochemical Society Proceedings
Publisher	The Electrochemical Society
Volume	2003-02

Conference

Conference	7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003
Country/Territory	France
City	Paris
Period	28/04/03 → 2/05/03

Keywords

Miniaturization
Ultrathin films
X-ray photoelectron spectra
n type semiconductor

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Cubaynes2003plasmaAccepted author version, 196 KB

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Cubaynes, F. N., Schmitz, J., van der Marel, C., Snijders, J. H. M., Veloso, A., Rothschild, A., Olsen, C., & Date, L. (2003). Plasma nitridation optimization for sub-15 A gate dielectrics. In R. E. Sah (Ed.), Silicon Nitride and Silicon Dioxide Thin Insulating Films VII: Proceedings of the International Symposium (Vol. 2, pp. 595-604). (Electrochemical Society Proceedings; Vol. 2003-02). Electrochemical Society.

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title = "Plasma nitridation optimization for sub-15 A gate dielectrics",

abstract = "The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=N-Si bonding configuration is observed when no PNA is applied after the plasma nitridation. The EOT reduction due to an increase of N in the film is not a monotonic increasing function of the DPN time. It seems that there is an optimum N concentration for a given thickness of the base oxide that enables the continued down scaling of DPN base dielectrics.",

keywords = "Miniaturization, Ultrathin films, X-ray photoelectron spectra, n type semiconductor",

author = "F.N. Cubaynes and J. Schmitz and \{van der Marel\}, C. and J.H.M. Snijders and A. Veloso and A. Rothschild and C. Olsen and L. Date",

note = "European Electrochemical Society Meeting E-ECS 2003; 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003 : European Electrochemical Society Meeting E-ECS 2003 ; Conference date: 28-04-2003 Through 02-05-2003",

year = "2003",

language = "English",

isbn = "9781566773478",

volume = "2",

series = "Electrochemical Society Proceedings",

publisher = "Electrochemical Society",

pages = "595--604",

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booktitle = "Silicon Nitride and Silicon Dioxide Thin Insulating Films VII",

address = "United States",

}

Cubaynes, FN, Schmitz, J, van der Marel, C, Snijders, JHM, Veloso, A, Rothschild, A, Olsen, C & Date, L 2003, Plasma nitridation optimization for sub-15 A gate dielectrics. in RE Sah (ed.), Silicon Nitride and Silicon Dioxide Thin Insulating Films VII: Proceedings of the International Symposium. vol. 2, Electrochemical Society Proceedings, vol. 2003-02, Electrochemical Society, Pennington, NJ, pp. 595-604, 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003, Paris, France, 28/04/03.

Plasma nitridation optimization for sub-15 A gate dielectrics. / Cubaynes, F.N.; Schmitz, J.; van der Marel, C. et al.
Silicon Nitride and Silicon Dioxide Thin Insulating Films VII: Proceedings of the International Symposium. ed. / Ram Ekwal Sah. Vol. 2 Pennington, NJ: Electrochemical Society, 2003. p. 595-604 (Electrochemical Society Proceedings; Vol. 2003-02).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Plasma nitridation optimization for sub-15 A gate dielectrics

AU - Cubaynes, F.N.

AU - Schmitz, J.

AU - van der Marel, C.

AU - Snijders, J.H.M.

AU - Veloso, A.

AU - Rothschild, A.

AU - Olsen, C.

AU - Date, L.

N1 - Conference code: 7

PY - 2003

Y1 - 2003

N2 - The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=N-Si bonding configuration is observed when no PNA is applied after the plasma nitridation. The EOT reduction due to an increase of N in the film is not a monotonic increasing function of the DPN time. It seems that there is an optimum N concentration for a given thickness of the base oxide that enables the continued down scaling of DPN base dielectrics.

AB - The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=N-Si bonding configuration is observed when no PNA is applied after the plasma nitridation. The EOT reduction due to an increase of N in the film is not a monotonic increasing function of the DPN time. It seems that there is an optimum N concentration for a given thickness of the base oxide that enables the continued down scaling of DPN base dielectrics.

KW - Miniaturization

KW - Ultrathin films

KW - X-ray photoelectron spectra

KW - n type semiconductor

M3 - Conference contribution

SN - 9781566773478

VL - 2

T3 - Electrochemical Society Proceedings

SP - 595

EP - 604

BT - Silicon Nitride and Silicon Dioxide Thin Insulating Films VII

A2 - Sah, Ram Ekwal

PB - Electrochemical Society

CY - Pennington, NJ

T2 - 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003

Y2 - 28 April 2003 through 2 May 2003

ER -

Cubaynes FN, Schmitz J, van der Marel C, Snijders JHM, Veloso A, Rothschild A et al. Plasma nitridation optimization for sub-15 A gate dielectrics. In Sah RE, editor, Silicon Nitride and Silicon Dioxide Thin Insulating Films VII: Proceedings of the International Symposium. Vol. 2. Pennington, NJ: Electrochemical Society. 2003. p. 595-604. (Electrochemical Society Proceedings).

Plasma nitridation optimization for sub-15 A gate dielectrics

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