Plasma oxidation as key mechanism for stoichiometry in Pulsed Laser Deposition grown oxide films

Research output: Contribution to conferencePoster

11 Downloads (Pure)

Abstract

We present a unique overview on the influence of growth parameters on the characteristics of the PLD plasma plume using Optical Self-Emission (OSE) imaging and spectroscopy, supported with Laser Induced Fluorescence (LIF) measurements. It is shown that in a relatively small background gas pressure regime, from 10-2 mbar to 10-1 mbar oxygen pressure, a transition from nonstoichiometric to stoichiometric growth of SrTiO3 films occurs as measured with X-ray Diffraction (XRD). In this pressure regime, OSE spectroscopy and LIF measurements also show a transition from incomplete to full oxidation of species in the plasma plume. This suggests that the oxidation of species in the plasma is a crucial mechanism for the stoichiometric reconstruction of the synthesized oxide thin films.
Original languageEnglish
Number of pages1
Publication statusPublished - 11 Mar 2014
Event26th NNV-Symposium Plasma Physics & Radiation Technology 2014 - CongresHotel De Werelt, Lunteren, Netherlands
Duration: 11 Mar 201412 Mar 2014
Conference number: 26

Conference

Conference26th NNV-Symposium Plasma Physics & Radiation Technology 2014
CountryNetherlands
CityLunteren
Period11/03/1412/03/14

Fingerprint Dive into the research topics of 'Plasma oxidation as key mechanism for stoichiometry in Pulsed Laser Deposition grown oxide films'. Together they form a unique fingerprint.

  • Cite this

    Groenen, R., Orsel, K., Bastiaens, H. M. J., Boller, K. J., Koster, G., & Rijnders, A. J. H. M. (2014). Plasma oxidation as key mechanism for stoichiometry in Pulsed Laser Deposition grown oxide films. Poster session presented at 26th NNV-Symposium Plasma Physics & Radiation Technology 2014, Lunteren, Netherlands.