Abstract
In this paper, by using both single-layer (SL) and multi-layer (ML) or stacked antenna structures, a simple experimental method is proposed to directly demonstrate the pure plasma process-induced latent damage on gate oxide without any impact of additional defects generated by normal constant current stress (CCS) revealing technique. The presented results show that this method is effective to study the latent damage.
Original language | English |
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Title of host publication | 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001) |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 220-223 |
Number of pages | 4 |
ISBN (Print) | 0-7803-6675-1 |
DOIs | |
Publication status | Published - 2001 |
Event | 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001 - Singapore, Singapore Duration: 9 Jul 2001 → 13 Jul 2001 Conference number: 8 |
Conference
Conference | 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001 |
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Abbreviated title | IPFA |
Country/Territory | Singapore |
City | Singapore |
Period | 9/07/01 → 13/07/01 |
Keywords
- METIS-200757
- IR-42209
- EWI-15641