Plasma process-induced latent damage on gate oxide - demonstrated by single-layer and multi-layer antenna structures

Zhichun Wang, Jan Ackaert, Cora Salm, Fred Kuper

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    Abstract

    In this paper, by using both single-layer (SL) and multi-layer (ML) or stacked antenna structures, a simple experimental method is proposed to directly demonstrate the pure plasma process-induced latent damage on gate oxide without any impact of additional defects generated by normal constant current stress (CCS) revealing technique. The presented results show that this method is effective to study the latent damage.
    Original languageEnglish
    Title of host publication8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001)
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society
    Pages220-223
    Number of pages4
    ISBN (Print)0-7803-6675-1
    DOIs
    Publication statusPublished - 2001
    Event8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001 - Singapore, Singapore
    Duration: 9 Jul 200113 Jul 2001
    Conference number: 8

    Conference

    Conference8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2001
    Abbreviated titleIPFA
    CountrySingapore
    CitySingapore
    Period9/07/0113/07/01

    Keywords

    • METIS-200757
    • IR-42209
    • EWI-15641

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