Poiseuille number for the fully development laminar flow through hexagonal ducts etched in silicon

Research output: Contribution to journalArticleAcademicpeer-review

16 Citations (Scopus)

Abstract

This paper focuses on a main subject encountered in the design process of the hexagonal ducts etched in <1 0 0> silicon, namely, the achievement of the Poiseuille number Po for the velocity field of the fully developed laminar flow. The particular shape of the duct is determined by silicon technology. This type of duct is the main part of a structure for the determination of fluid and flow parameters. We develop a procedure for obtaining Po versus the aspect ratio of the hexagonal cross section. The validity of this procedure is proven using different shapes of cross sections. We underline the merit of this procedure, namely, its applicability using a commercial software package in a rather straightforward manner. The results presented in this paper might be adapted for many other situations encountered both in micro and macro world where devices containing ducts having various non-circular cross sections are present.
Original languageUndefined
Pages (from-to)96-101
Number of pages6
JournalSensors and actuators. A: Physical
Volume90
Issue number1-2
DOIs
Publication statusPublished - 2001

Keywords

  • Fully developed laminar flow
  • Hexagonal duct
  • IR-67918
  • METIS-201153
  • Poiseuille number

Cite this

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title = "Poiseuille number for the fully development laminar flow through hexagonal ducts etched in silicon",
abstract = "This paper focuses on a main subject encountered in the design process of the hexagonal ducts etched in <1 0 0> silicon, namely, the achievement of the Poiseuille number Po for the velocity field of the fully developed laminar flow. The particular shape of the duct is determined by silicon technology. This type of duct is the main part of a structure for the determination of fluid and flow parameters. We develop a procedure for obtaining Po versus the aspect ratio of the hexagonal cross section. The validity of this procedure is proven using different shapes of cross sections. We underline the merit of this procedure, namely, its applicability using a commercial software package in a rather straightforward manner. The results presented in this paper might be adapted for many other situations encountered both in micro and macro world where devices containing ducts having various non-circular cross sections are present.",
keywords = "Fully developed laminar flow, Hexagonal duct, IR-67918, METIS-201153, Poiseuille number",
author = "N. Damean and Regtien, {Paulus P.L.}",
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volume = "90",
pages = "96--101",
journal = "Sensors and actuators. A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
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}

Poiseuille number for the fully development laminar flow through hexagonal ducts etched in silicon. / Damean, N.; Regtien, Paulus P.L.

In: Sensors and actuators. A: Physical, Vol. 90, No. 1-2, 2001, p. 96-101.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Poiseuille number for the fully development laminar flow through hexagonal ducts etched in silicon

AU - Damean, N.

AU - Regtien, Paulus P.L.

PY - 2001

Y1 - 2001

N2 - This paper focuses on a main subject encountered in the design process of the hexagonal ducts etched in <1 0 0> silicon, namely, the achievement of the Poiseuille number Po for the velocity field of the fully developed laminar flow. The particular shape of the duct is determined by silicon technology. This type of duct is the main part of a structure for the determination of fluid and flow parameters. We develop a procedure for obtaining Po versus the aspect ratio of the hexagonal cross section. The validity of this procedure is proven using different shapes of cross sections. We underline the merit of this procedure, namely, its applicability using a commercial software package in a rather straightforward manner. The results presented in this paper might be adapted for many other situations encountered both in micro and macro world where devices containing ducts having various non-circular cross sections are present.

AB - This paper focuses on a main subject encountered in the design process of the hexagonal ducts etched in <1 0 0> silicon, namely, the achievement of the Poiseuille number Po for the velocity field of the fully developed laminar flow. The particular shape of the duct is determined by silicon technology. This type of duct is the main part of a structure for the determination of fluid and flow parameters. We develop a procedure for obtaining Po versus the aspect ratio of the hexagonal cross section. The validity of this procedure is proven using different shapes of cross sections. We underline the merit of this procedure, namely, its applicability using a commercial software package in a rather straightforward manner. The results presented in this paper might be adapted for many other situations encountered both in micro and macro world where devices containing ducts having various non-circular cross sections are present.

KW - Fully developed laminar flow

KW - Hexagonal duct

KW - IR-67918

KW - METIS-201153

KW - Poiseuille number

U2 - 10.1016/S0924-4247(01)00457-5

DO - 10.1016/S0924-4247(01)00457-5

M3 - Article

VL - 90

SP - 96

EP - 101

JO - Sensors and actuators. A: Physical

JF - Sensors and actuators. A: Physical

SN - 0924-4247

IS - 1-2

ER -