Poiseuille number for the fully development laminar flow through hexagonal ducts etched in silicon

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    Abstract

    This paper focuses on a main subject encountered in the design process of the hexagonal ducts etched in <1 0 0> silicon, namely, the achievement of the Poiseuille number Po for the velocity field of the fully developed laminar flow. The particular shape of the duct is determined by silicon technology. This type of duct is the main part of a structure for the determination of fluid and flow parameters. We develop a procedure for obtaining Po versus the aspect ratio of the hexagonal cross section. The validity of this procedure is proven using different shapes of cross sections. We underline the merit of this procedure, namely, its applicability using a commercial software package in a rather straightforward manner. The results presented in this paper might be adapted for many other situations encountered both in micro and macro world where devices containing ducts having various non-circular cross sections are present.
    Original languageUndefined
    Pages (from-to)96-101
    Number of pages6
    JournalSensors and actuators. A: Physical
    Volume90
    Issue number1-2
    DOIs
    Publication statusPublished - 2001

    Keywords

    • Fully developed laminar flow
    • Hexagonal duct
    • IR-67918
    • METIS-201153
    • Poiseuille number

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