Abstract
The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using experiments and extensive TCAD simulations. Stress-free and high quality crystalline (111) lead-zirconate-titanate ($\mathrm{P}\mathrm{b}(\mathrm{Z}\mathrm{r}_{x}\mathrm{T}\mathrm{i}_{1-x})\mathrm{O}_{3}$ or PZT) films on top of GaN have been successfully obtained by adopting a single magnesium-oxide (MgO) monolayer as a buffer layer. By adjusting the zirconium composition (x) of PZT, solely the spontaneous polarization in PZT is varied. In addition a onedimensional electrostatic model has been derived showing the impact of the polarization in the ferroelectric gate on the 2DEG sheet density and threshold voltage ($V_{\mathrm{T}\mathrm{H}}$), which is in good agreement with TCAD simulations. The experimental data show for $x=0.20$ a minimum on-resistance $(R_{\mathrm{O}\mathrm{N}})$ of $\sim 9.7\mathrm{k}\Omega$ and for $x=0.52$ a minimal $V_{\mathrm{T}\mathrm{H}}$ of -3.3V. The results are important for providing a guide line to optimize ferroelectric gate AlGaN/GaN HEMTs.
Original language | English |
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Title of host publication | Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 329-332 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-7281-4836-6 |
ISBN (Print) | 978-1-7281-4837-3 |
DOIs | |
Publication status | Published - 18 Aug 2020 |
Event | 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 - Virtual, Online, Austria Duration: 13 Sept 2020 → 18 Sept 2020 Conference number: 32 |
Publication series
Name | International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
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Publisher | IEEE |
Volume | 2020 |
ISSN (Print) | 1063-6854 |
ISSN (Electronic) | 1946-0201 |
Conference
Conference | 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 |
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Abbreviated title | ISPSD 2020 |
Country/Territory | Austria |
City | Virtual, Online |
Period | 13/09/20 → 18/09/20 |
Keywords
- 2DEG
- AlGaN/GaN HEMTs
- ferroelectric gate
- Polarization effect
- PZT
- 22/3 OA procedure