Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors

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Abstract

The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using experiments and extensive TCAD simulations. Stress-free and high quality crystalline (111) lead-zirconate-titanate ($\mathrm{P}\mathrm{b}(\mathrm{Z}\mathrm{r}_{x}\mathrm{T}\mathrm{i}_{1-x})\mathrm{O}_{3}$ or PZT) films on top of GaN have been successfully obtained by adopting a single magnesium-oxide (MgO) monolayer as a buffer layer. By adjusting the zirconium composition (x) of PZT, solely the spontaneous polarization in PZT is varied. In addition a onedimensional electrostatic model has been derived showing the impact of the polarization in the ferroelectric gate on the 2DEG sheet density and threshold voltage ($V_{\mathrm{T}\mathrm{H}}$), which is in good agreement with TCAD simulations. The experimental data show for $x=0.20$ a minimum on-resistance $(R_{\mathrm{O}\mathrm{N}})$ of $\sim 9.7\mathrm{k}\Omega$ and for $x=0.52$ a minimal $V_{\mathrm{T}\mathrm{H}}$ of -3.3V. The results are important for providing a guide line to optimize ferroelectric gate AlGaN/GaN HEMTs.

Original languageEnglish
Title of host publicationProceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
PublisherIEEE
Pages329-332
Number of pages4
ISBN (Electronic)9781728148366
DOIs
Publication statusPublished - Sep 2020
Event32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 - Virtual, Online, Austria
Duration: 13 Sep 202018 Sep 2020
Conference number: 32

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2020-September
ISSN (Print)1063-6854

Conference

Conference32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Abbreviated titleISPSD 2020
CountryAustria
CityVirtual, Online
Period13/09/2018/09/20

Keywords

  • 2DEG
  • AlGaN/GaN HEMTs
  • ferroelectric gate
  • Polarization effect
  • PZT

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