Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors

R. Zhou; L. Li; W. Zhao; Z. Liao; M.D. Nguyen; M. Nunnenkamp; E.P. Houwman; G. Koster; A.J.H.M. Rijnders; D.J. Gravesteijn; R.J.E. Hueting

doi:10.1109/ISPSD46842.2020.9170173

Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors

R. Zhou, L. Li, W. Zhao, Z. Liao, M.D. Nguyen, M. Nunnenkamp, E.P. Houwman, G. Koster, A.J.H.M. Rijnders, D.J. Gravesteijn, R.J.E. Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using experiments and extensive TCAD simulations. Stress-free and high quality crystalline (111) lead-zirconate-titanate ($\mathrm{P}\mathrm{b}(\mathrm{Z}\mathrm{r}_{x}\mathrm{T}\mathrm{i}_{1-x})\mathrm{O}_{3}$ or PZT) films on top of GaN have been successfully obtained by adopting a single magnesium-oxide (MgO) monolayer as a buffer layer. By adjusting the zirconium composition (x) of PZT, solely the spontaneous polarization in PZT is varied. In addition a onedimensional electrostatic model has been derived showing the impact of the polarization in the ferroelectric gate on the 2DEG sheet density and threshold voltage ($V_{\mathrm{T}\mathrm{H}}$), which is in good agreement with TCAD simulations. The experimental data show for $x=0.20$ a minimum on-resistance $(R_{\mathrm{O}\mathrm{N}})$ of $\sim 9.7\mathrm{k}\Omega$ and for $x=0.52$ a minimal $V_{\mathrm{T}\mathrm{H}}$ of -3.3V. The results are important for providing a guide line to optimize ferroelectric gate AlGaN/GaN HEMTs.

Original language	English
Title of host publication	Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	329-332
Number of pages	4
ISBN (Electronic)	978-1-7281-4836-6
ISBN (Print)	978-1-7281-4837-3
DOIs	https://doi.org/10.1109/ISPSD46842.2020.9170173
Publication status	Published - 18 Aug 2020
Event	32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 - Virtual, Online, Austria Duration: 13 Sept 2020 → 18 Sept 2020 Conference number: 32

Publication series

Name	International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Publisher	IEEE
Volume	2020
ISSN (Print)	1063-6854
ISSN (Electronic)	1946-0201

Conference

Conference	32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Abbreviated title	ISPSD 2020
Country/Territory	Austria
City	Virtual, Online
Period	13/09/20 → 18/09/20

Keywords

2DEG
AlGaN/GaN HEMTs
ferroelectric gate
Polarization effect
PZT
22/3 OA procedure

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10.1109/ISPSD46842.2020.9170173

ArticleFinal published version, 1.57 MBLicence: Taverne

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Zhou, R., Li, L., Zhao, W., Liao, Z., Nguyen, M. D., Nunnenkamp, M., Houwman, E. P., Koster, G., Rijnders, A. J. H. M., Gravesteijn, D. J., & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). Article 9170173 (International Symposium on Power Semiconductor Devices and ICs (ISPSD); Vol. 2020). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173

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abstract = "The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using experiments and extensive TCAD simulations. Stress-free and high quality crystalline (111) lead-zirconate-titanate ($\mathrm{P}\mathrm{b}(\mathrm{Z}\mathrm{r}_{x}\mathrm{T}\mathrm{i}_{1-x})\mathrm{O}_{3}$ or PZT) films on top of GaN have been successfully obtained by adopting a single magnesium-oxide (MgO) monolayer as a buffer layer. By adjusting the zirconium composition (x) of PZT, solely the spontaneous polarization in PZT is varied. In addition a onedimensional electrostatic model has been derived showing the impact of the polarization in the ferroelectric gate on the 2DEG sheet density and threshold voltage ($V_{\mathrm{T}\mathrm{H}}$), which is in good agreement with TCAD simulations. The experimental data show for $x=0.20$ a minimum on-resistance $(R_{\mathrm{O}\mathrm{N}})$ of $\sim 9.7\mathrm{k}\Omega$ and for $x=0.52$ a minimal $V_{\mathrm{T}\mathrm{H}}$ of -3.3V. The results are important for providing a guide line to optimize ferroelectric gate AlGaN/GaN HEMTs.",

keywords = "2DEG, AlGaN/GaN HEMTs, ferroelectric gate, Polarization effect, PZT, 22/3 OA procedure",

author = "R. Zhou and L. Li and W. Zhao and Z. Liao and M.D. Nguyen and M. Nunnenkamp and E.P. Houwman and G. Koster and A.J.H.M. Rijnders and D.J. Gravesteijn and R.J.E. Hueting",

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doi = "10.1109/ISPSD46842.2020.9170173",

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pages = "329--332",

booktitle = "Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020",

address = "United States",

note = "32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020, ISPSD 2020 ; Conference date: 13-09-2020 Through 18-09-2020",

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Zhou, R, Li, L, Zhao, W, Liao, Z, Nguyen, MD, Nunnenkamp, M, Houwman, EP , Koster, G , Rijnders, AJHM, Gravesteijn, DJ & Hueting, RJE 2020, Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. in Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020., 9170173, International Symposium on Power Semiconductor Devices and ICs (ISPSD), vol. 2020, IEEE, Piscataway, NJ, pp. 329-332, 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020, Virtual, Online, Austria, 13/09/20. https://doi.org/10.1109/ISPSD46842.2020.9170173

Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. / Zhou, R.; Li, L.; Zhao, W. et al.
Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Piscataway, NJ: IEEE, 2020. p. 329-332 9170173 (International Symposium on Power Semiconductor Devices and ICs (ISPSD); Vol. 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors

AU - Zhou, R.

AU - Li, L.

AU - Zhao, W.

AU - Liao, Z.

AU - Nguyen, M.D.

AU - Nunnenkamp, M.

AU - Houwman, E.P.

AU - Koster, G.

AU - Rijnders, A.J.H.M.

AU - Gravesteijn, D.J.

AU - Hueting, R.J.E.

N1 - Conference code: 32

PY - 2020/8/18

Y1 - 2020/8/18

N2 - The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using experiments and extensive TCAD simulations. Stress-free and high quality crystalline (111) lead-zirconate-titanate ($\mathrm{P}\mathrm{b}(\mathrm{Z}\mathrm{r}_{x}\mathrm{T}\mathrm{i}_{1-x})\mathrm{O}_{3}$ or PZT) films on top of GaN have been successfully obtained by adopting a single magnesium-oxide (MgO) monolayer as a buffer layer. By adjusting the zirconium composition (x) of PZT, solely the spontaneous polarization in PZT is varied. In addition a onedimensional electrostatic model has been derived showing the impact of the polarization in the ferroelectric gate on the 2DEG sheet density and threshold voltage ($V_{\mathrm{T}\mathrm{H}}$), which is in good agreement with TCAD simulations. The experimental data show for $x=0.20$ a minimum on-resistance $(R_{\mathrm{O}\mathrm{N}})$ of $\sim 9.7\mathrm{k}\Omega$ and for $x=0.52$ a minimal $V_{\mathrm{T}\mathrm{H}}$ of -3.3V. The results are important for providing a guide line to optimize ferroelectric gate AlGaN/GaN HEMTs.

AB - The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using experiments and extensive TCAD simulations. Stress-free and high quality crystalline (111) lead-zirconate-titanate ($\mathrm{P}\mathrm{b}(\mathrm{Z}\mathrm{r}_{x}\mathrm{T}\mathrm{i}_{1-x})\mathrm{O}_{3}$ or PZT) films on top of GaN have been successfully obtained by adopting a single magnesium-oxide (MgO) monolayer as a buffer layer. By adjusting the zirconium composition (x) of PZT, solely the spontaneous polarization in PZT is varied. In addition a onedimensional electrostatic model has been derived showing the impact of the polarization in the ferroelectric gate on the 2DEG sheet density and threshold voltage ($V_{\mathrm{T}\mathrm{H}}$), which is in good agreement with TCAD simulations. The experimental data show for $x=0.20$ a minimum on-resistance $(R_{\mathrm{O}\mathrm{N}})$ of $\sim 9.7\mathrm{k}\Omega$ and for $x=0.52$ a minimal $V_{\mathrm{T}\mathrm{H}}$ of -3.3V. The results are important for providing a guide line to optimize ferroelectric gate AlGaN/GaN HEMTs.

KW - 2DEG

KW - AlGaN/GaN HEMTs

KW - ferroelectric gate

KW - Polarization effect

KW - PZT

KW - 22/3 OA procedure

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DO - 10.1109/ISPSD46842.2020.9170173

M3 - Conference contribution

AN - SCOPUS:85090553780

SN - 978-1-7281-4837-3

T3 - International Symposium on Power Semiconductor Devices and ICs (ISPSD)

SP - 329

EP - 332

BT - Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020

PB - IEEE

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ER -

Zhou R, Li L, Zhao W, Liao Z, Nguyen MD, Nunnenkamp M et al. Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Piscataway, NJ: IEEE. 2020. p. 329-332. 9170173. (International Symposium on Power Semiconductor Devices and ICs (ISPSD)). doi: 10.1109/ISPSD46842.2020.9170173

Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors

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