Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors

R. Zhou, L. Li, W. Zhao, Z. Liao, M.D. Nguyen, M. Nunnenkamp, E.P. Houwman, G. Koster, A.J.H.M. Rijnders, D.J. Gravesteijn, R.J.E. Hueting

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)
138 Downloads (Pure)

Abstract

The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using experiments and extensive TCAD simulations. Stress-free and high quality crystalline (111) lead-zirconate-titanate ($\mathrm{P}\mathrm{b}(\mathrm{Z}\mathrm{r}_{x}\mathrm{T}\mathrm{i}_{1-x})\mathrm{O}_{3}$ or PZT) films on top of GaN have been successfully obtained by adopting a single magnesium-oxide (MgO) monolayer as a buffer layer. By adjusting the zirconium composition (x) of PZT, solely the spontaneous polarization in PZT is varied. In addition a onedimensional electrostatic model has been derived showing the impact of the polarization in the ferroelectric gate on the 2DEG sheet density and threshold voltage ($V_{\mathrm{T}\mathrm{H}}$), which is in good agreement with TCAD simulations. The experimental data show for $x=0.20$ a minimum on-resistance $(R_{\mathrm{O}\mathrm{N}})$ of $\sim 9.7\mathrm{k}\Omega$ and for $x=0.52$ a minimal $V_{\mathrm{T}\mathrm{H}}$ of -3.3V. The results are important for providing a guide line to optimize ferroelectric gate AlGaN/GaN HEMTs.

Original languageEnglish
Title of host publicationProceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages329-332
Number of pages4
ISBN (Electronic)978-1-7281-4836-6
ISBN (Print)978-1-7281-4837-3
DOIs
Publication statusPublished - 18 Aug 2020
Event32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 - Virtual, Online, Austria
Duration: 13 Sept 202018 Sept 2020
Conference number: 32

Publication series

NameInternational Symposium on Power Semiconductor Devices and ICs (ISPSD)
PublisherIEEE
Volume2020
ISSN (Print)1063-6854
ISSN (Electronic)1946-0201

Conference

Conference32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Abbreviated titleISPSD 2020
Country/TerritoryAustria
CityVirtual, Online
Period13/09/2018/09/20

Keywords

  • 2DEG
  • AlGaN/GaN HEMTs
  • ferroelectric gate
  • Polarization effect
  • PZT
  • 22/3 OA procedure

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