Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors

R. Zhou, L. Li, W. Zhao, Z. Liao, M.D. Nguyen, M. Nunnenkamp, E.P. Houwman, G. Koster, A.J.H.M. Rijnders, D.J. Gravesteijn, R.J.E. Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)
47 Downloads (Pure)

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