Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si

I. Brunets; J. Holleman; Alexeij Y. Kovalgin; Jurriaan Schmitz

doi:10.1109/ESSDERC.2008.4681705

Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si

I. Brunets, J. Holleman, Alexeij Y. Kovalgin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

7 Downloads (Pure)

Abstract

In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively

Original language	English
Title of host publication	Proceedings of the 38th European Solid-State Device Research Conference
Place of Publication	Edinburgh, Schotland
Publisher	Institute of Physics (IOP)
Pages	87-90
Number of pages	4
ISBN (Print)	978-1-4244-2363-7
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681705
Publication status	Published - 15 Sept 2008
Event	38th European Solid-State Device Research Conference, ESSDERC 2008 - Edinburgh, United Kingdom Duration: 15 Sept 2008 → 19 Sept 2008 Conference number: 38

Publication series

Name
Publisher	IOP Institute of Physics
Number	WoTUG-31

Conference

Conference	38th European Solid-State Device Research Conference, ESSDERC 2008
Abbreviated title	ESSDERC
Country/Territory	United Kingdom
City	Edinburgh
Period	15/09/08 → 19/09/08

Keywords

SC-ICF: Integrated Circuit Fabrication

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10.1109/ESSDERC.2008.4681705

Cite this

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title = "Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si",

abstract = "In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively",

keywords = "SC-ICF: Integrated Circuit Fabrication",

author = "I. Brunets and J. Holleman and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",

note = "10.1109/ESSDERC.2008.4681705 ; 38th European Solid-State Device Research Conference, ESSDERC 2008, ESSDERC ; Conference date: 15-09-2008 Through 19-09-2008",

year = "2008",

month = sep,

day = "15",

doi = "10.1109/ESSDERC.2008.4681705",

language = "English",

isbn = "978-1-4244-2363-7",

publisher = "Institute of Physics (IOP)",

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pages = "87--90",

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address = "United Kingdom",

}

Brunets, I, Holleman, J, Kovalgin, AY & Schmitz, J 2008, Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. in Proceedings of the 38th European Solid-State Device Research Conference. Institute of Physics (IOP), Edinburgh, Schotland, pp. 87-90, 38th European Solid-State Device Research Conference, ESSDERC 2008, Edinburgh, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSDERC.2008.4681705

Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. / Brunets, I.; Holleman, J.; Kovalgin, Alexeij Y. et al.
Proceedings of the 38th European Solid-State Device Research Conference. Edinburgh, Schotland: Institute of Physics (IOP), 2008. p. 87-90.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si

AU - Brunets, I.

AU - Holleman, J.

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

N1 - Conference code: 38

PY - 2008/9/15

Y1 - 2008/9/15

N2 - In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively

AB - In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively

KW - SC-ICF: Integrated Circuit Fabrication

U2 - 10.1109/ESSDERC.2008.4681705

DO - 10.1109/ESSDERC.2008.4681705

M3 - Conference contribution

SN - 978-1-4244-2363-7

SP - 87

EP - 90

BT - Proceedings of the 38th European Solid-State Device Research Conference

PB - Institute of Physics (IOP)

CY - Edinburgh, Schotland

T2 - 38th European Solid-State Device Research Conference, ESSDERC 2008

Y2 - 15 September 2008 through 19 September 2008

ER -

Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si

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