Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si

I. Brunets, J. Holleman, Alexeij Y. Kovalgin, Jurriaan Schmitz

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    4 Citations (Scopus)


    In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively
    Original languageUndefined
    Title of host publicationProceedings of the 38th European Solid-State Device Research Conference
    Place of PublicationEdinburgh, Schotland
    PublisherIOP Institute of Physics
    Number of pages4
    ISBN (Print)978-1-4244-2363-7
    Publication statusPublished - 15 Sep 2008
    Event38th European Solid-State Device Research Conference, ESSDERC 2008 - Edinburgh, United Kingdom
    Duration: 15 Sep 200819 Sep 2008
    Conference number: 38

    Publication series

    PublisherIOP Institute of Physics


    Conference38th European Solid-State Device Research Conference, ESSDERC 2008
    Abbreviated titleESSDERC
    CountryUnited Kingdom


    • SC-ICF: Integrated Circuit Fabrication
    • METIS-254983
    • IR-62599
    • EWI-14581

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