Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si

I. Brunets, J. Holleman, Alexeij Y. Kovalgin, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    4 Citations (Scopus)

    Abstract

    In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively
    Original languageUndefined
    Title of host publicationProceedings of the 38th European Solid-State Device Research Conference
    Place of PublicationEdinburgh, Schotland
    PublisherIOP Institute of Physics
    Pages87-90
    Number of pages4
    ISBN (Print)978-1-4244-2363-7
    DOIs
    Publication statusPublished - 15 Sep 2008
    Event38th European Solid-State Device Research Conference, ESSDERC 2008 - Edinburgh, United Kingdom
    Duration: 15 Sep 200819 Sep 2008
    Conference number: 38

    Publication series

    Name
    PublisherIOP Institute of Physics
    NumberWoTUG-31

    Conference

    Conference38th European Solid-State Device Research Conference, ESSDERC 2008
    Abbreviated titleESSDERC
    CountryUnited Kingdom
    CityEdinburgh
    Period15/09/0819/09/08

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • METIS-254983
    • IR-62599
    • EWI-14581

    Cite this

    Brunets, I., Holleman, J., Kovalgin, A. Y., & Schmitz, J. (2008). Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. In Proceedings of the 38th European Solid-State Device Research Conference (pp. 87-90). [10.1109/ESSDERC.2008.4681705] Edinburgh, Schotland: IOP Institute of Physics. https://doi.org/10.1109/ESSDERC.2008.4681705
    Brunets, I. ; Holleman, J. ; Kovalgin, Alexeij Y. ; Schmitz, Jurriaan. / Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. Proceedings of the 38th European Solid-State Device Research Conference. Edinburgh, Schotland : IOP Institute of Physics, 2008. pp. 87-90
    @inproceedings{f5a69bec66f443a9a71b97b800f4fddc,
    title = "Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si",
    abstract = "In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively",
    keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-254983, IR-62599, EWI-14581",
    author = "I. Brunets and J. Holleman and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
    note = "10.1109/ESSDERC.2008.4681705",
    year = "2008",
    month = "9",
    day = "15",
    doi = "10.1109/ESSDERC.2008.4681705",
    language = "Undefined",
    isbn = "978-1-4244-2363-7",
    publisher = "IOP Institute of Physics",
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    Brunets, I, Holleman, J, Kovalgin, AY & Schmitz, J 2008, Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. in Proceedings of the 38th European Solid-State Device Research Conference., 10.1109/ESSDERC.2008.4681705, IOP Institute of Physics, Edinburgh, Schotland, pp. 87-90, 38th European Solid-State Device Research Conference, ESSDERC 2008, Edinburgh, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSDERC.2008.4681705

    Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. / Brunets, I.; Holleman, J.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

    Proceedings of the 38th European Solid-State Device Research Conference. Edinburgh, Schotland : IOP Institute of Physics, 2008. p. 87-90 10.1109/ESSDERC.2008.4681705.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    T1 - Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si

    AU - Brunets, I.

    AU - Holleman, J.

    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

    N1 - 10.1109/ESSDERC.2008.4681705

    PY - 2008/9/15

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    N2 - In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively

    AB - In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550 °C. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively

    KW - SC-ICF: Integrated Circuit Fabrication

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    KW - IR-62599

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    BT - Proceedings of the 38th European Solid-State Device Research Conference

    PB - IOP Institute of Physics

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    Brunets I, Holleman J, Kovalgin AY, Schmitz J. Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. In Proceedings of the 38th European Solid-State Device Research Conference. Edinburgh, Schotland: IOP Institute of Physics. 2008. p. 87-90. 10.1109/ESSDERC.2008.4681705 https://doi.org/10.1109/ESSDERC.2008.4681705