Polycrystalline Silicon as a Diffusion Source and Interconnect Layer in FL Realizations

Jan Middelhoek; Arie Kooy

doi:10.1109/JSSC.1977.1050861

Polycrystalline Silicon as a Diffusion Source and Interconnect Layer in FL Realizations

Jan Middelhoek, Arie Kooy

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I2L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.

Original language	English
Pages (from-to)	135-138
Number of pages	4
Journal	IEEE journal of solid-state circuits
Volume	12
Issue number	2
DOIs	https://doi.org/10.1109/JSSC.1977.1050861
Publication status	Published - 1977

Keywords

Bipolar integrated circuits
Integrated circuit technology
Integrated logic circuits
Semiconductor doping
Silicon
Etching
Boron
Surface resistance
Region 1
Integrated circuit layout
Fabrication
Bipolar transistors
Solid state circuits
Capacitance

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10.1109/JSSC.1977.1050861

Middelhoek1977polycrystallineFinal published version, 731 KB

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@article{8be6e9595c6f4d8185e5196788be0b5d,

title = "Polycrystalline Silicon as a Diffusion Source and Interconnect Layer in FL Realizations",

abstract = "Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I2L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.",

keywords = "Bipolar integrated circuits, Integrated circuit technology, Integrated logic circuits, Semiconductor doping, Silicon, Etching, Boron, Surface resistance, Region 1, Integrated circuit layout, Fabrication, Bipolar transistors, Solid state circuits, Capacitance",

author = "Jan Middelhoek and Arie Kooy",

year = "1977",

doi = "10.1109/JSSC.1977.1050861",

language = "English",

volume = "12",

pages = "135--138",

journal = "IEEE journal of solid-state circuits",

issn = "0018-9200",

publisher = "IEEE",

number = "2",

}

TY - JOUR

T1 - Polycrystalline Silicon as a Diffusion Source and Interconnect Layer in FL Realizations

AU - Middelhoek, Jan

AU - Kooy, Arie

PY - 1977

Y1 - 1977

N2 - Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I2L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.

AB - Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I2L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.

KW - Bipolar integrated circuits

KW - Integrated circuit technology

KW - Integrated logic circuits

KW - Semiconductor doping

KW - Silicon

KW - Etching

KW - Boron

KW - Surface resistance

KW - Region 1

KW - Integrated circuit layout

KW - Fabrication

KW - Bipolar transistors

KW - Solid state circuits

KW - Capacitance

UR - http://www.scopus.com/inward/record.url?scp=0017478710&partnerID=8YFLogxK

U2 - 10.1109/JSSC.1977.1050861

DO - 10.1109/JSSC.1977.1050861

M3 - Article

AN - SCOPUS:0017478710

SN - 0018-9200

VL - 12

SP - 135

EP - 138

JO - IEEE journal of solid-state circuits

JF - IEEE journal of solid-state circuits

IS - 2

ER -

Polycrystalline Silicon as a Diffusion Source and Interconnect Layer in FL Realizations

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