Polycrystalline Silicon as a Diffusion Source and Interconnect Layer in FL Realizations

Jan Middelhoek, Arie Kooy

    Research output: Contribution to journalArticleAcademicpeer-review

    8 Citations (Scopus)
    21 Downloads (Pure)

    Abstract

    Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I2L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.

    Original languageEnglish
    Pages (from-to)135-138
    Number of pages4
    JournalIEEE journal of solid-state circuits
    Volume12
    Issue number2
    DOIs
    Publication statusPublished - 1977

    Keywords

    • Bipolar integrated circuits
    • Integrated circuit technology
    • Integrated logic circuits
    • Semiconductor doping
    • Silicon
    • Etching
    • Boron
    • Surface resistance
    • Region 1
    • Integrated circuit layout
    • Fabrication
    • Bipolar transistors
    • Solid state circuits
    • Capacitance

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