Porous GaP multilayers formed by electrochemical etching

R.W. Tjerkstra, J. Gomez Rivas, D. Vanmaekelbergh, J.J. Kelly*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

57 Citations (Scopus)

Abstract

The properties of porous GaP, formed by anodic etching in Formula are described. Pore size, pore density, and the interpore distance depend on the dopant density and the potential at which the sample is etched. In addition, it is shown that at high potential, the GaP passivates as a result of the formation of an oxide layer. These features allow us to grow multilayer structures of GaP with modulated porosity and/or oxide layers. The dissolution of oxide at the base of a porous layer can be used to produce freestanding porous membranes.
Original languageEnglish
Pages (from-to)G32-G35
Number of pages3
JournalElectrochemical and solid-state letters
Volume5
Issue number5
DOIs
Publication statusPublished - 2002
Externally publishedYes

Keywords

  • Gallium compounds
  • III-V semiconductors
  • Porous semiconductors
  • Porosity
  • Etching
  • Anodisation
  • Dissolving
  • Multilayers
  • Membranes
  • Passivation

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