Porous GaP multilayers formed by electrochemical etching

R.W. Tjerkstra; J. Gomez Rivas; D. Vanmaekelbergh; J.J. Kelly

doi:10.1149/1.1466935

Porous GaP multilayers formed by electrochemical etching

R.W. Tjerkstra, J. Gomez Rivas, D. Vanmaekelbergh, J.J. Kelly^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

59 Citations (Scopus)

Abstract

The properties of porous GaP, formed by anodic etching in Formula are described. Pore size, pore density, and the interpore distance depend on the dopant density and the potential at which the sample is etched. In addition, it is shown that at high potential, the GaP passivates as a result of the formation of an oxide layer. These features allow us to grow multilayer structures of GaP with modulated porosity and/or oxide layers. The dissolution of oxide at the base of a porous layer can be used to produce freestanding porous membranes.

Original language	English
Pages (from-to)	G32-G35
Number of pages	3
Journal	Electrochemical and solid-state letters
Volume	5
Issue number	5
DOIs	https://doi.org/10.1149/1.1466935
Publication status	Published - 2002
Externally published	Yes

Keywords

Gallium compounds
III-V semiconductors
Porous semiconductors
Porosity
Etching
Anodisation
Dissolving
Multilayers
Membranes
Passivation

Access to Document

10.1149/1.1466935

Cite this

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title = "Porous GaP multilayers formed by electrochemical etching",

abstract = "The properties of porous GaP, formed by anodic etching in Formula are described. Pore size, pore density, and the interpore distance depend on the dopant density and the potential at which the sample is etched. In addition, it is shown that at high potential, the GaP passivates as a result of the formation of an oxide layer. These features allow us to grow multilayer structures of GaP with modulated porosity and/or oxide layers. The dissolution of oxide at the base of a porous layer can be used to produce freestanding porous membranes.",

keywords = "Gallium compounds, III-V semiconductors, Porous semiconductors, Porosity, Etching, Anodisation, Dissolving, Multilayers, Membranes, Passivation",

author = "R.W. Tjerkstra and {Gomez Rivas}, J. and D. Vanmaekelbergh and J.J. Kelly",

year = "2002",

doi = "10.1149/1.1466935",

language = "English",

volume = "5",

pages = "G32--G35",

journal = "Electrochemical and solid-state letters",

issn = "1099-0062",

publisher = "The Electrochemical Society Inc.",

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T1 - Porous GaP multilayers formed by electrochemical etching

AU - Tjerkstra, R.W.

AU - Gomez Rivas, J.

AU - Vanmaekelbergh, D.

AU - Kelly, J.J.

PY - 2002

Y1 - 2002

N2 - The properties of porous GaP, formed by anodic etching in Formula are described. Pore size, pore density, and the interpore distance depend on the dopant density and the potential at which the sample is etched. In addition, it is shown that at high potential, the GaP passivates as a result of the formation of an oxide layer. These features allow us to grow multilayer structures of GaP with modulated porosity and/or oxide layers. The dissolution of oxide at the base of a porous layer can be used to produce freestanding porous membranes.

AB - The properties of porous GaP, formed by anodic etching in Formula are described. Pore size, pore density, and the interpore distance depend on the dopant density and the potential at which the sample is etched. In addition, it is shown that at high potential, the GaP passivates as a result of the formation of an oxide layer. These features allow us to grow multilayer structures of GaP with modulated porosity and/or oxide layers. The dissolution of oxide at the base of a porous layer can be used to produce freestanding porous membranes.

KW - Gallium compounds

KW - III-V semiconductors

KW - Porous semiconductors

KW - Porosity

KW - Etching

KW - Anodisation

KW - Dissolving

KW - Multilayers

KW - Membranes

KW - Passivation

U2 - 10.1149/1.1466935

DO - 10.1149/1.1466935

M3 - Article

SN - 1099-0062

VL - 5

SP - G32-G35

JO - Electrochemical and solid-state letters

JF - Electrochemical and solid-state letters

IS - 5

ER -