Porous silicon bulk micromachining for thermally isolated membrane formation

Cs. Ducso, E. Vazsonyi, M. Adam, I. Szabo, I. Barsony, I. Barsony, Johannes G.E. Gardeniers, Albert van den Berg

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Abstract

A novel low thermal budget technique is proposed for the preparation of thermally isolated silicon membranes. The selective formation of porous silicon in a p-type silicon wafer results in an undercut profile below the implanted n-type silicon regions. The sacrificial porous layer is subsequently removed in a dilute KOH solution. A non-stoichiometric LPCVD nitride layer combination forms the suspension of the single-crystalline silicon membranes. This technique eliminates the need for epitaxial substrates and backside alignment, and proves to be very efficient in the realization of a high-temperature micro-hotplate operating with minimum power consumption for the purpose of integrated gas sensors.
Original languageUndefined
Pages (from-to)235-239
Number of pages5
JournalSensors and actuators. A: Physical
Volume60
Issue number60
DOIs
Publication statusPublished - May 1997

Keywords

  • METIS-111504
  • IR-14234
  • EWI-13539

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