Porous silicon bulk micromachining for thermally isolated membrane formation

Cs. Ducso, E. Vazsonyi, M. Adam, I. Szabo, I. Barsony, I. Barsony, Johannes G.E. Gardeniers, Albert van den Berg

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

A novel low thermal budget technique is proposed for the preparation of thermally isolated silicon membranes. The selective formation of porous silicon in a p-type silicon wafer results in an undercut profile below the implanted n-type silicon regions. The sacrificial porous layer is subsequently removed in a dilute KOH solution. A non-stoichiometric LPCVD nitride layer combination forms the suspension of the single-crystalline silicon membranes. This technique eliminates the need for epitaxial substrates and backside alignment, and proves to be very efficient in the realization of a high-temperature micro-hotplate operating with minimum power consumption for the purpose of integrated gas sensors.
Original languageUndefined
Pages (from-to)235-239
Number of pages5
JournalSensors and actuators. A: Physical
Volume60
Issue number60
DOIs
Publication statusPublished - May 1997

Keywords

  • METIS-111504
  • IR-14234
  • EWI-13539

Cite this

Ducso, Cs. ; Vazsonyi, E. ; Adam, M. ; Szabo, I. ; Barsony, I. ; Barsony, I. ; Gardeniers, Johannes G.E. ; van den Berg, Albert. / Porous silicon bulk micromachining for thermally isolated membrane formation. In: Sensors and actuators. A: Physical. 1997 ; Vol. 60, No. 60. pp. 235-239.
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Porous silicon bulk micromachining for thermally isolated membrane formation. / Ducso, Cs.; Vazsonyi, E.; Adam, M.; Szabo, I.; Barsony, I.; Barsony, I.; Gardeniers, Johannes G.E.; van den Berg, Albert.

In: Sensors and actuators. A: Physical, Vol. 60, No. 60, 05.1997, p. 235-239.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Porous silicon bulk micromachining for thermally isolated membrane formation

AU - Ducso, Cs.

AU - Vazsonyi, E.

AU - Adam, M.

AU - Szabo, I.

AU - Barsony, I.

AU - Barsony, I.

AU - Gardeniers, Johannes G.E.

AU - van den Berg, Albert

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AB - A novel low thermal budget technique is proposed for the preparation of thermally isolated silicon membranes. The selective formation of porous silicon in a p-type silicon wafer results in an undercut profile below the implanted n-type silicon regions. The sacrificial porous layer is subsequently removed in a dilute KOH solution. A non-stoichiometric LPCVD nitride layer combination forms the suspension of the single-crystalline silicon membranes. This technique eliminates the need for epitaxial substrates and backside alignment, and proves to be very efficient in the realization of a high-temperature micro-hotplate operating with minimum power consumption for the purpose of integrated gas sensors.

KW - METIS-111504

KW - IR-14234

KW - EWI-13539

U2 - 10.1016/S0924-4247(97)01384-8

DO - 10.1016/S0924-4247(97)01384-8

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