A preparation method is described of monophasic yttria stabilized zirconia doped with Bi2O3. This material is prepared from a homogeneous power which, after pressing, is sintered in a Bi2O3 atmosphere. The resulting ceramic has a composition of 0.78rO2-0.206 YO1.5-0.014BiO1.5. The grain boundaries are enriched with bismuth. A relative density of 95% of the theoretical one is attained at a considerably lower temperature than the bismuth free sample. The electrical conductivities of the monophasic Bi doped and the Bi-free electrolyte material do not differ significantly.