Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry

Sanchit Deshmukh, Miguel Munoz Rojo, Eilam Yalon, Sam Vaziri, Eric Pop

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

Resistive memory (RRAM) is a promising technology for high density, non-volatile data storage. Metal-oxide RRAM involves forming and breaking conductive filaments (CF) in an oxide like Hf02 as the mechanism of data storage. CFs are sub-50 nm in diameter [1], causing sharp temperature gradients within the RRAM oxide. However, imaging individual CFs in RRAM devices is challenging due to their nanoscale size and the presence of the top electrode (TE). While previous works have performed electrical [2] or optical averaging [3] of CF temperature, evaluating the heating of a single CF within RRAM has remained an open problem.

Original languageEnglish
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherIEEE
ISBN (Print)9781538630280
DOIs
Publication statusPublished - 20 Aug 2018
Externally publishedYes
Event76th Device Research Conference, DRC 2018 - University of California, Santa Barbara, Santa Barbara, United States
Duration: 24 Jun 201827 Jun 2018
Conference number: 76
https://www.mrs.org/drc-2018

Conference

Conference76th Device Research Conference, DRC 2018
Abbreviated titleDRC 2018
CountryUnited States
CitySanta Barbara
Period24/06/1827/06/18
Internet address

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  • Cite this

    Deshmukh, S., Rojo, M. M., Yalon, E., Vaziri, S., & Pop, E. (2018). Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry. In 2018 76th Device Research Conference, DRC 2018 [8442187] IEEE. https://doi.org/10.1109/DRC.2018.8442187