Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures

B. S.Y. Kim*, Y. A. Birkhölzer, X. Feng, Y. Hikita, H. Y. Hwang*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We have examined the band alignment in SrIrO3/Nb:SrTiO3 (001) heterojunctions at room temperature using three independent techniques: current-voltage and capacitance-voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ∼14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

Original languageEnglish
Article number133504
JournalApplied physics letters
Volume114
Issue number13
DOIs
Publication statusPublished - 1 Apr 2019

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