Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures

B. S.Y. Kim; Y. A. Birkhölzer; X. Feng; Y. Hikita; H. Y. Hwang

doi:10.1063/1.5087956

Probing the band alignment in rectifying SrIrO₃/Nb:SrTiO₃ heterostructures

B. S.Y. Kim^*, Y. A. Birkhölzer, X. Feng, Y. Hikita, H. Y. Hwang^*

^*Corresponding author for this work

Inorganic Materials Science

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

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Abstract

We have examined the band alignment in SrIrO₃/Nb:SrTiO₃ (001) heterojunctions at room temperature using three independent techniques: current-voltage and capacitance-voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ∼14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

Original language	English
Article number	133504
Journal	Applied physics letters
Volume	114
Issue number	13
DOIs	https://doi.org/10.1063/1.5087956
Publication status	Published - 1 Apr 2019

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title = "Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures",

abstract = "We have examined the band alignment in SrIrO3/Nb:SrTiO3 (001) heterojunctions at room temperature using three independent techniques: current-voltage and capacitance-voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ∼14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.",

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AU - Kim, B. S.Y.

AU - Birkhölzer, Y. A.

AU - Feng, X.

AU - Hikita, Y.

AU - Hwang, H. Y.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - We have examined the band alignment in SrIrO3/Nb:SrTiO3 (001) heterojunctions at room temperature using three independent techniques: current-voltage and capacitance-voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ∼14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

AB - We have examined the band alignment in SrIrO3/Nb:SrTiO3 (001) heterojunctions at room temperature using three independent techniques: current-voltage and capacitance-voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ∼14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

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Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures

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Probing the band alignment in rectifying SrIrO₃/Nb:SrTiO₃ heterostructures