Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes

Peter F Satterthwaite, Ananth S Yalamarthy, Sam Vaziri, Miguel Muñoz Rojo, Eric Pop, Debbie G Senesky

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    Graphene and III-nitride semiconductors are promising materials platforms for the development of high-frequency, high-power electronic devices. Successful integration of these materials, however, requires a detailed understanding of the electrical properties of the graphene/III-nitride interface. In this work, we investigate the interfacial charge carrier transport across the graphene/InAIN interface. We show that at room temperature the leakage current in these devices is well described by the Fowler-Nordheim tunneling relation. Temperature-dependent measurements between 100 K and 400 K, however, show that as temperature decreases, the leakage current increases. This observation cannot be explained by Fowler-Nordheim or other standard conduction mechanisms (thermionic emission, Poole-Frenkel emission, trap-assisted tunneling). It is proposed that device processing, specifically polymer residue contamination, affects the interfacial coupling between graphene and the InAIN substrate, resulting in the observed anomalous current transport. Evidence for such a mechanism is provided by Raman spectroscopy and temperature-dependent atomic force microscopy studies.
    Original languageEnglish
    Title of host publication2019 IEEE International Reliability Physics Symposium (IRPS)
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    ISBN (Electronic)978-1-5386-9504-3
    ISBN (Print)978-1-5386-9505-0
    DOIs
    Publication statusAccepted/In press - 2019
    Event57th IEEE International Reliability Physics Symposium, IRPS 2019 - Monterrey, United States
    Duration: 31 Mar 20194 Apr 2019
    Conference number: 57

    Conference

    Conference57th IEEE International Reliability Physics Symposium, IRPS 2019
    Abbreviated titleIRPS 2019
    CountryUnited States
    CityMonterrey
    Period31/03/194/04/19

    Fingerprint Dive into the research topics of 'Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes'. Together they form a unique fingerprint.

  • Cite this

    F Satterthwaite, P., S Yalamarthy, A., Vaziri, S., Muñoz Rojo, M., Pop, E., & G Senesky, D. (Accepted/In press). Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes. In 2019 IEEE International Reliability Physics Symposium (IRPS) Piscataway, NJ: IEEE. https://doi.org/10.1109/IRPS.2019.8720465