Process induced poling and plasma induced damage of thin films PZT

Jiahui Wang; Evert Houwman; Cora Salm; Duc Minh Nguyen; Kurt Vergeer; Jurriaan Schmitz

doi:10.1016/j.mee.2017.01.016

Process induced poling and plasma induced damage of thin films PZT

Jiahui Wang^*, Evert Houwman, Cora Salm, Duc Minh Nguyen, Kurt Vergeer, Jurriaan Schmitz

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

This paper treats processing sequence induced changes on PZT. Two kinds of metal-PZT-metal capacitors are compared. The top surface and sidewall of PZT in one kind of capacitor is directly bombarded by energetic particles during ion milling process, whereas PZT in the other kind of capacitor is not. The polarity of plasma charging may depend on the ion milling parameters and influence the self-poling of virgin PZT capacitors. Direct ion bombardment induces a significant decrease of PZT permittivity. The PZT reliability (both RVS and TDDB) at positive voltage worsens because of bombardments of energetic particles; whereas the PZT reliability at negative voltage is not influenced. It indicates that the process induced positively charged defects present in the upper part of the capacitor structure initiate the dielectric breakdown.

Original language	English
Pages (from-to)	13-18
Number of pages	6
Journal	Microelectronic engineering
Volume	177
Early online date	17 Jan 2017
DOIs	https://doi.org/10.1016/j.mee.2017.01.016
Publication status	Published - 5 Jun 2017

Keywords

Self-bias voltage
Process induced damage
Plasma charging
Dielectric damage
Capacitance-voltage measurement
Poling
PZT
Reliability
Ar ion milling
TDDB
2023 OA procedure

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10.1016/j.mee.2017.01.016

ArticleFinal published version, 1.12 MBLicence: Taverne

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title = "Process induced poling and plasma induced damage of thin films PZT",

abstract = "This paper treats processing sequence induced changes on PZT. Two kinds of metal-PZT-metal capacitors are compared. The top surface and sidewall of PZT in one kind of capacitor is directly bombarded by energetic particles during ion milling process, whereas PZT in the other kind of capacitor is not. The polarity of plasma charging may depend on the ion milling parameters and influence the self-poling of virgin PZT capacitors. Direct ion bombardment induces a significant decrease of PZT permittivity. The PZT reliability (both RVS and TDDB) at positive voltage worsens because of bombardments of energetic particles; whereas the PZT reliability at negative voltage is not influenced. It indicates that the process induced positively charged defects present in the upper part of the capacitor structure initiate the dielectric breakdown.",

keywords = "Self-bias voltage, Process induced damage, Plasma charging, Dielectric damage, Capacitance-voltage measurement, Poling, PZT, Reliability, Ar ion milling, TDDB, 2023 OA procedure",

author = "Jiahui Wang and Evert Houwman and Cora Salm and Nguyen, {Duc Minh} and Kurt Vergeer and Jurriaan Schmitz",

year = "2017",

month = jun,

day = "5",

doi = "10.1016/j.mee.2017.01.016",

language = "English",

volume = "177",

pages = "13--18",

journal = "Microelectronic engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Process induced poling and plasma induced damage of thin films PZT

AU - Wang, Jiahui

AU - Houwman, Evert

AU - Salm, Cora

AU - Nguyen, Duc Minh

AU - Vergeer, Kurt

AU - Schmitz, Jurriaan

PY - 2017/6/5

Y1 - 2017/6/5

N2 - This paper treats processing sequence induced changes on PZT. Two kinds of metal-PZT-metal capacitors are compared. The top surface and sidewall of PZT in one kind of capacitor is directly bombarded by energetic particles during ion milling process, whereas PZT in the other kind of capacitor is not. The polarity of plasma charging may depend on the ion milling parameters and influence the self-poling of virgin PZT capacitors. Direct ion bombardment induces a significant decrease of PZT permittivity. The PZT reliability (both RVS and TDDB) at positive voltage worsens because of bombardments of energetic particles; whereas the PZT reliability at negative voltage is not influenced. It indicates that the process induced positively charged defects present in the upper part of the capacitor structure initiate the dielectric breakdown.

AB - This paper treats processing sequence induced changes on PZT. Two kinds of metal-PZT-metal capacitors are compared. The top surface and sidewall of PZT in one kind of capacitor is directly bombarded by energetic particles during ion milling process, whereas PZT in the other kind of capacitor is not. The polarity of plasma charging may depend on the ion milling parameters and influence the self-poling of virgin PZT capacitors. Direct ion bombardment induces a significant decrease of PZT permittivity. The PZT reliability (both RVS and TDDB) at positive voltage worsens because of bombardments of energetic particles; whereas the PZT reliability at negative voltage is not influenced. It indicates that the process induced positively charged defects present in the upper part of the capacitor structure initiate the dielectric breakdown.

KW - Self-bias voltage

KW - Process induced damage

KW - Plasma charging

KW - Dielectric damage

KW - Capacitance-voltage measurement

KW - Poling

KW - PZT

KW - Reliability

KW - Ar ion milling

KW - TDDB

KW - 2023 OA procedure

U2 - 10.1016/j.mee.2017.01.016

DO - 10.1016/j.mee.2017.01.016

M3 - Article

SN - 0167-9317

VL - 177

SP - 13

EP - 18

JO - Microelectronic engineering

JF - Microelectronic engineering

ER -

Process induced poling and plasma induced damage of thin films PZT

Abstract

Keywords

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