Abstract
Failure rates of modern ASICs and ASSPs can not be demonstrated using reliability tests on product level. Reliability demonstration must be done by
quantifying the quality of the process that produces these integrated circuits. Process capability however, is not fixed over time. As a process gets more mature process capability tends to improve. In this paper we introduce the concept of process maturity growth to quantify the quality of suppliers processes as a function of time. The method is illustrated for a submicron double metal CMOS process in which many mixed standard cell and full custom designs are processed.
quantifying the quality of the process that produces these integrated circuits. Process capability however, is not fixed over time. As a process gets more mature process capability tends to improve. In this paper we introduce the concept of process maturity growth to quantify the quality of suppliers processes as a function of time. The method is illustrated for a submicron double metal CMOS process in which many mixed standard cell and full custom designs are processed.
Original language | English |
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Title of host publication | 5th European Symposium of Electron Devices, Failure Physics and Analysis |
Subtitle of host publication | Glasgow, Scotland, 4-7 October 1994 |
Place of Publication | Glasgow, Scotland |
Publisher | QaRel Associates |
Pages | 321-326 |
Publication status | Published - 1 Jun 1995 |
Event | 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 1994 - Glasgow, Scotland, United Kingdom Duration: 4 Oct 1994 → 7 Oct 1994 Conference number: 5 |
Conference
Conference | 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 1994 |
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Abbreviated title | ESREF 1994 |
Country/Territory | United Kingdom |
City | Glasgow, Scotland |
Period | 4/10/94 → 7/10/94 |