Abstract
A qualification strategy for advanced embedded non-volatile memory technology has been revealed. This strategy consists of: a thorough understanding of the requirements, extensive use and frequent update of the FMEA (failure mode effect analysis), a qualification plan with excellent coverage of all the risk areas, implementing effective in-line and off-line measures and control, and check-off of all the tests with good results. With such a strategy in place, the Philips 0.18 /spl mu/m embedded flash technology has been successfully qualified for volume production.
| Original language | English |
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| Title of host publication | 2003 IEEE International Reliability Physics Symposium proceedings |
| Subtitle of host publication | 41st annual : Dallas, Texas, March 30-April 4, 2003 |
| Place of Publication | Piscataway, NJ |
| Publisher | IEEE |
| Pages | 604-605 |
| Number of pages | 2 |
| ISBN (Print) | 0-7803-7649-8 |
| DOIs | |
| Publication status | Published - 30 Mar 2003 |
| Event | 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States Duration: 30 Mar 2003 → 4 Apr 2003 |
Conference
| Conference | 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 |
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| Abbreviated title | IRPS |
| Country/Territory | United States |
| City | Dallas |
| Period | 30/03/03 → 4/04/03 |
Keywords
- METIS-215880