Progressive degradation in a-Si: H/SiN thin film transistors

A.R. Merticaru, A.J. Mouthaan, F.G. Kuper

    Research output: Contribution to journalArticleAcademicpeer-review

    5 Citations (Scopus)

    Abstract

    In this paper we present the study of gate-stress induced degradation in a-Si:H/SiN TFTs. The drain current transient during gate bias stress (forward or reverse bias) and subsequent relaxation cannot be fitted with the models existent in the literature but it shows to be described by a progressive degradation model (PDM). According to PDM the degradation of the electrical response is a combined effect of a fast interface traps generation and a slow charge trapping at the created defect sites and existing bulk defects in a-SiN:H transitional region.
    Original languageEnglish
    Pages (from-to)60-66
    Number of pages7
    JournalThin solid films
    Volume427
    Issue number1-2
    DOIs
    Publication statusPublished - 3 Mar 2003
    EventSymposium K on Thin Film Materials for Large Area Electronics 2002 - Strasbourg, France
    Duration: 3 Mar 20033 Mar 2003

    Keywords

    • IR-67731
    • EWI-15545

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