Properties of annealed silicon oxynitride layers for optical applications

Kerstin Worhoff; M.G. Hussein; C.G.H. Roeloffzen; L.T.H. Hilderink

Properties of annealed silicon oxynitride layers for optical applications

Kerstin Worhoff, M.G. Hussein, C.G.H. Roeloffzen, L.T.H. Hilderink

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Silicon nitride and silicon dioxide thin insulating films VII
Subtitle of host publication	proceedings of the international symposium
Editors	R.E. Sah, K.B. Sundaram, M.J. Deen, D. Landeer, W.D. Brown, D Misra
Publisher	Electrochemical Society
Pages	406-417
Number of pages	12
ISBN (Print)	1-56677-347-4
Publication status	Published - 27 Apr 2003
Event	7th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003 - Paris, France Duration: 27 Apr 2003 → 2 May 2003 Conference number: 7

Publication series

Name	Proceedings
Publisher	Electrochemical Society
Volume	2003-02

Conference

Conference	7th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003
Country/Territory	France
City	Paris
Period	27/04/03 → 2/05/03

Keywords

METIS-214847

Cite this

Worhoff, K., Hussein, M. G., Roeloffzen, C. G. H., & Hilderink, L. T. H. (2003). Properties of annealed silicon oxynitride layers for optical applications. In R. E. Sah, K. B. Sundaram, M. J. Deen, D. Landeer, W. D. Brown, & D. Misra (Eds.), Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium (pp. 406-417). (Proceedings; Vol. 2003-02). Electrochemical Society.

Worhoff, Kerstin ; Hussein, M.G. ; Roeloffzen, C.G.H. et al. / Properties of annealed silicon oxynitride layers for optical applications. Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium. editor / R.E. Sah ; K.B. Sundaram ; M.J. Deen ; D. Landeer ; W.D. Brown ; D Misra. Electrochemical Society, 2003. pp. 406-417 (Proceedings).

@inproceedings{fe584a5e0c3b49faa40ff826cb2b9d89,

title = "Properties of annealed silicon oxynitride layers for optical applications",

keywords = "METIS-214847",

author = "Kerstin Worhoff and M.G. Hussein and C.G.H. Roeloffzen and L.T.H. Hilderink",

year = "2003",

month = apr,

day = "27",

language = "English",

isbn = "1-56677-347-4",

series = "Proceedings",

publisher = "Electrochemical Society",

pages = "406--417",

editor = "R.E. Sah and K.B. Sundaram and M.J. Deen and D. Landeer and W.D. Brown and D Misra",

booktitle = "Silicon nitride and silicon dioxide thin insulating films VII",

address = "United States",

note = "7th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003 ; Conference date: 27-04-2003 Through 02-05-2003",

}

Worhoff, K, Hussein, MG, Roeloffzen, CGH & Hilderink, LTH 2003, Properties of annealed silicon oxynitride layers for optical applications. in RE Sah, KB Sundaram, MJ Deen, D Landeer, WD Brown & D Misra (eds), Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium. Proceedings, vol. 2003-02, Electrochemical Society, pp. 406-417, 7th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003, Paris, France, 27/04/03.

Properties of annealed silicon oxynitride layers for optical applications. / Worhoff, Kerstin; Hussein, M.G.; Roeloffzen, C.G.H. et al.
Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium. ed. / R.E. Sah; K.B. Sundaram; M.J. Deen; D. Landeer; W.D. Brown; D Misra. Electrochemical Society, 2003. p. 406-417 (Proceedings; Vol. 2003-02).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Properties of annealed silicon oxynitride layers for optical applications

AU - Worhoff, Kerstin

AU - Hussein, M.G.

AU - Roeloffzen, C.G.H.

AU - Hilderink, L.T.H.

N1 - Conference code: 7

PY - 2003/4/27

Y1 - 2003/4/27

KW - METIS-214847

M3 - Conference contribution

SN - 1-56677-347-4

T3 - Proceedings

SP - 406

EP - 417

BT - Silicon nitride and silicon dioxide thin insulating films VII

A2 - Sah, R.E.

A2 - Sundaram, K.B.

A2 - Deen, M.J.

A2 - Landeer, D.

A2 - Brown, W.D.

A2 - Misra, D

PB - Electrochemical Society

T2 - 7th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003

Y2 - 27 April 2003 through 2 May 2003

ER -