Properties of annealed silicon oxynitride layers for optical applications

Kerstin Worhoff, M.G. Hussein, C.G.H. Roeloffzen, L.T.H. Hilderink

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageEnglish
    Title of host publicationSilicon nitride and silicon dioxide thin insulating films VII
    Subtitle of host publicationproceedings of the international symposium
    EditorsR.E. Sah, K.B. Sundaram, M.J. Deen, D. Landeer, W.D. Brown, D Misra
    PublisherThe Electrochemical Society Inc.
    Pages406-417
    Number of pages12
    ISBN (Print)1-56677-347-4
    Publication statusPublished - 27 Apr 2003
    Event7th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003 - Paris, France
    Duration: 27 Apr 20032 May 2003
    Conference number: 7

    Publication series

    NameProceedings
    PublisherElectrochemical Society
    Volume2003-02

    Conference

    Conference7th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003
    CountryFrance
    CityParis
    Period27/04/032/05/03

    Keywords

    • METIS-214847

    Cite this

    Worhoff, K., Hussein, M. G., Roeloffzen, C. G. H., & Hilderink, L. T. H. (2003). Properties of annealed silicon oxynitride layers for optical applications. In R. E. Sah, K. B. Sundaram, M. J. Deen, D. Landeer, W. D. Brown, & D. Misra (Eds.), Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium (pp. 406-417). (Proceedings; Vol. 2003-02). The Electrochemical Society Inc..
    Worhoff, Kerstin ; Hussein, M.G. ; Roeloffzen, C.G.H. ; Hilderink, L.T.H. / Properties of annealed silicon oxynitride layers for optical applications. Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium. editor / R.E. Sah ; K.B. Sundaram ; M.J. Deen ; D. Landeer ; W.D. Brown ; D Misra. The Electrochemical Society Inc., 2003. pp. 406-417 (Proceedings).
    @inproceedings{fe584a5e0c3b49faa40ff826cb2b9d89,
    title = "Properties of annealed silicon oxynitride layers for optical applications",
    keywords = "METIS-214847",
    author = "Kerstin Worhoff and M.G. Hussein and C.G.H. Roeloffzen and L.T.H. Hilderink",
    year = "2003",
    month = "4",
    day = "27",
    language = "English",
    isbn = "1-56677-347-4",
    series = "Proceedings",
    publisher = "The Electrochemical Society Inc.",
    pages = "406--417",
    editor = "R.E. Sah and K.B. Sundaram and M.J. Deen and D. Landeer and W.D. Brown and D Misra",
    booktitle = "Silicon nitride and silicon dioxide thin insulating films VII",
    address = "United States",

    }

    Worhoff, K, Hussein, MG, Roeloffzen, CGH & Hilderink, LTH 2003, Properties of annealed silicon oxynitride layers for optical applications. in RE Sah, KB Sundaram, MJ Deen, D Landeer, WD Brown & D Misra (eds), Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium. Proceedings, vol. 2003-02, The Electrochemical Society Inc., pp. 406-417, 7th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films 2003, Paris, France, 27/04/03.

    Properties of annealed silicon oxynitride layers for optical applications. / Worhoff, Kerstin; Hussein, M.G.; Roeloffzen, C.G.H.; Hilderink, L.T.H.

    Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium. ed. / R.E. Sah; K.B. Sundaram; M.J. Deen; D. Landeer; W.D. Brown; D Misra. The Electrochemical Society Inc., 2003. p. 406-417 (Proceedings; Vol. 2003-02).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Properties of annealed silicon oxynitride layers for optical applications

    AU - Worhoff, Kerstin

    AU - Hussein, M.G.

    AU - Roeloffzen, C.G.H.

    AU - Hilderink, L.T.H.

    PY - 2003/4/27

    Y1 - 2003/4/27

    KW - METIS-214847

    M3 - Conference contribution

    SN - 1-56677-347-4

    T3 - Proceedings

    SP - 406

    EP - 417

    BT - Silicon nitride and silicon dioxide thin insulating films VII

    A2 - Sah, R.E.

    A2 - Sundaram, K.B.

    A2 - Deen, M.J.

    A2 - Landeer, D.

    A2 - Brown, W.D.

    A2 - Misra, D

    PB - The Electrochemical Society Inc.

    ER -

    Worhoff K, Hussein MG, Roeloffzen CGH, Hilderink LTH. Properties of annealed silicon oxynitride layers for optical applications. In Sah RE, Sundaram KB, Deen MJ, Landeer D, Brown WD, Misra D, editors, Silicon nitride and silicon dioxide thin insulating films VII: proceedings of the international symposium. The Electrochemical Society Inc. 2003. p. 406-417. (Proceedings).