Properties of stacked NbN tunnel junctions

H.J. Hedbabny; H. Rogalla

doi:10.1109/20.92518

Properties of stacked NbN tunnel junctions

H.J. Hedbabny
, H. Rogalla

Research output: Contribution to journal › Conference article › Academic › peer-review

8 Citations (Scopus)

4 Downloads (Pure)

Abstract

Stacks of up to three tunnel junctions on top or each other were fabricated in NbN-MgO technique. Different preparation methods were tested, two gave favorable results. In the first one the whole stack is prepared insitu and structured afterwards by lift-off and reactive and argon ion etching respectively. We investigated the resulting IV-characteristics of stacks of two NbN tunnel junctions with sumgap voltages of up to 8.3mV. Since it was not possible to establish electrical cal connections to the intermediate electrodes by this method, a second one was applied : each NbN/MgO-layear is prepared in a separate step and structured by liftoff. Here the IV-characteristics, the interaction between the tunnel junctions and especially their rf-properties were investigated. Shapiro steps and photon assisted tunneling were observed in the IV-characteristics of a receiver junction, while the bottom tunnel junction was used as microwave generator.

Original language	English
Pages (from-to)	1231-1234
Number of pages	4
Journal	IEEE transactions on magnetics
Volume	25
Issue number	2
DOIs	https://doi.org/10.1109/20.92518
Publication status	Published - Mar 1989
Event	13th Applied Superconductivity Conference, ASC 1988 - San Francisco, United States Duration: 21 Aug 1988 → 25 Aug 1988 Conference number: 13 https://inspirehep.net/conferences/966846

Access to Document

10.1109/20.92518

ArticleFinal published version, 432 KB

Cite this

@article{87cd3d806c724cdb9835ca7246789fb4,

title = "Properties of stacked NbN tunnel junctions",

abstract = "Stacks of up to three tunnel junctions on top or each other were fabricated in NbN-MgO technique. Different preparation methods were tested, two gave favorable results. In the first one the whole stack is prepared insitu and structured afterwards by lift-off and reactive and argon ion etching respectively. We investigated the resulting IV-characteristics of stacks of two NbN tunnel junctions with sumgap voltages of up to 8.3mV. Since it was not possible to establish electrical cal connections to the intermediate electrodes by this method, a second one was applied : each NbN/MgO-layear is prepared in a separate step and structured by liftoff. Here the IV-characteristics, the interaction between the tunnel junctions and especially their rf-properties were investigated. Shapiro steps and photon assisted tunneling were observed in the IV-characteristics of a receiver junction, while the bottom tunnel junction was used as microwave generator.",

author = "H.J. Hedbabny and H. Rogalla",

year = "1989",

month = mar,

doi = "10.1109/20.92518",

language = "English",

volume = "25",

pages = "1231--1234",

journal = "IEEE transactions on magnetics",

issn = "0018-9464",

publisher = "IEEE",

number = "2",

note = "13th Applied Superconductivity Conference, ASC 1988, ASC 1988 ; Conference date: 21-08-1988 Through 25-08-1988",

url = "https://inspirehep.net/conferences/966846",

}

TY - JOUR

T1 - Properties of stacked NbN tunnel junctions

AU - Hedbabny, H.J.

AU - Rogalla, H.

N1 - Conference code: 13

PY - 1989/3

Y1 - 1989/3

N2 - Stacks of up to three tunnel junctions on top or each other were fabricated in NbN-MgO technique. Different preparation methods were tested, two gave favorable results. In the first one the whole stack is prepared insitu and structured afterwards by lift-off and reactive and argon ion etching respectively. We investigated the resulting IV-characteristics of stacks of two NbN tunnel junctions with sumgap voltages of up to 8.3mV. Since it was not possible to establish electrical cal connections to the intermediate electrodes by this method, a second one was applied : each NbN/MgO-layear is prepared in a separate step and structured by liftoff. Here the IV-characteristics, the interaction between the tunnel junctions and especially their rf-properties were investigated. Shapiro steps and photon assisted tunneling were observed in the IV-characteristics of a receiver junction, while the bottom tunnel junction was used as microwave generator.

AB - Stacks of up to three tunnel junctions on top or each other were fabricated in NbN-MgO technique. Different preparation methods were tested, two gave favorable results. In the first one the whole stack is prepared insitu and structured afterwards by lift-off and reactive and argon ion etching respectively. We investigated the resulting IV-characteristics of stacks of two NbN tunnel junctions with sumgap voltages of up to 8.3mV. Since it was not possible to establish electrical cal connections to the intermediate electrodes by this method, a second one was applied : each NbN/MgO-layear is prepared in a separate step and structured by liftoff. Here the IV-characteristics, the interaction between the tunnel junctions and especially their rf-properties were investigated. Shapiro steps and photon assisted tunneling were observed in the IV-characteristics of a receiver junction, while the bottom tunnel junction was used as microwave generator.

UR - https://www.scopus.com/pages/publications/0024629342

U2 - 10.1109/20.92518

DO - 10.1109/20.92518

M3 - Conference article

AN - SCOPUS:0024629342

SN - 0018-9464

VL - 25

SP - 1231

EP - 1234

JO - IEEE transactions on magnetics

JF - IEEE transactions on magnetics

IS - 2

T2 - 13th Applied Superconductivity Conference, ASC 1988

Y2 - 21 August 1988 through 25 August 1988

ER -

Properties of stacked NbN tunnel junctions

Abstract

Access to Document

Other files and links

Fingerprint

Cite this