Prospective Analysis of the effect of Silicon based and Silicon-Carbide based Converter on G3 Power Line Communication

Waseem Wafik Saad Elsayed; Hermes José Loschi; Piotr Lezynski; Robert Smolenski

doi:10.1109/emceurope48519.2020.9245727

Prospective Analysis of the effect of Silicon based and Silicon-Carbide based Converter on G3 Power Line Communication

Waseem Wafik Saad Elsayed, Hermes José Loschi, Piotr Lezynski, Robert Smolenski

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

10 Downloads (Pure)

Abstract

The rapid growth of renewable energy applications increases the complexity of the system, followed by the increase of using fast switching converters in the smart grid. Thus, the probability of electromagnetic interference between the system elements may cause a lot of communication problems between smart grid elements. On the other hand, the use of a SiC-based converter gets a great interest due to its fast switching capability and loss reduction. This paper focuses on studying the difference between the influence of dc Si-based transistor and SiC-based transistor on the performance of narrowband G3-PLC. The experimental setup was implemented to emulate a real situation, and tests were performed to show the results at different operating conditions.

Original language	English
Title of host publication	2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE
Place of Publication	Piscataway, NJ
Publisher	IEEE
ISBN (Electronic)	978-1-7281-5579-1, 978-1-7281-5578-4 (USB)
ISBN (Print)	9781728155791
DOIs	https://doi.org/10.1109/emceurope48519.2020.9245727
Publication status	Published - 6 Nov 2020
Event	2020 International Symposium on Electromagnetic Compatibility, EMC EUROPE 2020 - Virtual Conference, Rome, Italy Duration: 23 Sept 2020 → 26 Sept 2020

Conference

Conference	2020 International Symposium on Electromagnetic Compatibility, EMC EUROPE 2020
Abbreviated title	EMC EUROPE 2020
Country/Territory	Italy
City	Rome
Period	23/09/20 → 26/09/20

Keywords

22/2 OA procedure

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/emceurope48519.2020.9245727

Sayed_2020_ProspectiveFinal published version, 1.23 MBLicence: Taverne

Cite this

@inproceedings{631c2fc3d44947618169912cb6f842fa,

title = "Prospective Analysis of the effect of Silicon based and Silicon-Carbide based Converter on G3 Power Line Communication",

abstract = "The rapid growth of renewable energy applications increases the complexity of the system, followed by the increase of using fast switching converters in the smart grid. Thus, the probability of electromagnetic interference between the system elements may cause a lot of communication problems between smart grid elements. On the other hand, the use of a SiC-based converter gets a great interest due to its fast switching capability and loss reduction. This paper focuses on studying the difference between the influence of dc Si-based transistor and SiC-based transistor on the performance of narrowband G3-PLC. The experimental setup was implemented to emulate a real situation, and tests were performed to show the results at different operating conditions.",

keywords = "22/2 OA procedure",

author = "{Wafik Saad Elsayed}, Waseem and Loschi, {Hermes Jos{\'e}} and Piotr Lezynski and Robert Smolenski",

year = "2020",

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day = "6",

doi = "10.1109/emceurope48519.2020.9245727",

language = "English",

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booktitle = "2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE",

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note = "2020 International Symposium on Electromagnetic Compatibility, EMC EUROPE 2020, EMC EUROPE 2020 ; Conference date: 23-09-2020 Through 26-09-2020",

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Wafik Saad Elsayed, W, Loschi, HJ, Lezynski, P & Smolenski, R 2020, Prospective Analysis of the effect of Silicon based and Silicon-Carbide based Converter on G3 Power Line Communication. in 2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE. IEEE, Piscataway, NJ, 2020 International Symposium on Electromagnetic Compatibility, EMC EUROPE 2020, Rome, Italy, 23/09/20. https://doi.org/10.1109/emceurope48519.2020.9245727

Prospective Analysis of the effect of Silicon based and Silicon-Carbide based Converter on G3 Power Line Communication. / Wafik Saad Elsayed, Waseem; Loschi, Hermes José; Lezynski, Piotr et al.
2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE. Piscataway, NJ: IEEE, 2020.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Prospective Analysis of the effect of Silicon based and Silicon-Carbide based Converter on G3 Power Line Communication

AU - Wafik Saad Elsayed, Waseem

AU - Loschi, Hermes José

AU - Lezynski, Piotr

AU - Smolenski, Robert

PY - 2020/11/6

Y1 - 2020/11/6

N2 - The rapid growth of renewable energy applications increases the complexity of the system, followed by the increase of using fast switching converters in the smart grid. Thus, the probability of electromagnetic interference between the system elements may cause a lot of communication problems between smart grid elements. On the other hand, the use of a SiC-based converter gets a great interest due to its fast switching capability and loss reduction. This paper focuses on studying the difference between the influence of dc Si-based transistor and SiC-based transistor on the performance of narrowband G3-PLC. The experimental setup was implemented to emulate a real situation, and tests were performed to show the results at different operating conditions.

AB - The rapid growth of renewable energy applications increases the complexity of the system, followed by the increase of using fast switching converters in the smart grid. Thus, the probability of electromagnetic interference between the system elements may cause a lot of communication problems between smart grid elements. On the other hand, the use of a SiC-based converter gets a great interest due to its fast switching capability and loss reduction. This paper focuses on studying the difference between the influence of dc Si-based transistor and SiC-based transistor on the performance of narrowband G3-PLC. The experimental setup was implemented to emulate a real situation, and tests were performed to show the results at different operating conditions.

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