Prospects of efficient band-to-band emission in silicon LEDs

Jurriaan  Schmitz

doi:10.1117/12.2245589

Prospects of efficient band-to-band emission in silicon LEDs

Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In this paper a review is presented of light emission from forward-biased silicon diodes. After a treatment of the carrier recombination physics governing in this indirect-bandgap material, the article describes important works in this field. Then, routes are proposed for further improvement of the internal quantum efficiency for light emission. A good choice of carrier injection level will limit the impact of both Shockley-Read-Hall recombination and Auger recombination. However, the structural design of the diode has a strong influence on the overall quantum efficiency, as both surface recombination must be dealt with, and contact recombination avoided. New attributes of CMOS such as embedded SiGe offer additional opportunities for silicon LED architectures and their application.

Original language	English
Title of host publication	Fourth Conference on Sensors, MEMS, and Electro-Optic Systems
Subtitle of host publication	18–20 September 2016, Skukuza, Kruger National Park, South Africa
Editors	Monuko du Plessis
Publisher	SPIE
Pages	2-7
Number of pages	6
ISBN (Electronic)	9781510605145
ISBN (Print)	9781510605138
DOIs	https://doi.org/10.1117/12.2245589
Publication status	Published - 3 Feb 2017
Event	4th Conference on Sensors, MEMS, and Electro-Optic Systems, SMEOS 2016 - Nombolo Mdhluli Conference Centre, Skukuza, Kruger National Park, South Africa Duration: 12 Sep 2016 → 15 Sep 2016 Conference number: 4

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	10036
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	4th Conference on Sensors, MEMS, and Electro-Optic Systems, SMEOS 2016
Abbreviated title	SMEOS
Country/Territory	South Africa
City	Skukuza, Kruger National Park
Period	12/09/16 → 15/09/16

Keywords

recombination
diodes
EWI-27757
light emitters
IR-103621
LEDs
Silicon
CMOS

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10.1117/12.2245589

Schmitz_SPIESubmitted version, 339 KBLicence: Unspecified

Cite this

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title = "Prospects of efficient band-to-band emission in silicon LEDs",

abstract = "In this paper a review is presented of light emission from forward-biased silicon diodes. After a treatment of the carrier recombination physics governing in this indirect-bandgap material, the article describes important works in this field. Then, routes are proposed for further improvement of the internal quantum efficiency for light emission. A good choice of carrier injection level will limit the impact of both Shockley-Read-Hall recombination and Auger recombination. However, the structural design of the diode has a strong influence on the overall quantum efficiency, as both surface recombination must be dealt with, and contact recombination avoided. New attributes of CMOS such as embedded SiGe offer additional opportunities for silicon LED architectures and their application.",

keywords = "recombination, diodes, EWI-27757, light emitters, IR-103621, LEDs, Silicon, CMOS",

author = "Jurriaan Schmitz",

year = "2017",

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doi = "10.1117/12.2245589",

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publisher = "SPIE",

pages = "2--7",

editor = "{du Plessis}, Monuko",

booktitle = "Fourth Conference on Sensors, MEMS, and Electro-Optic Systems",

note = "4th Conference on Sensors, MEMS, and Electro-Optic Systems, SMEOS 2016, SMEOS ; Conference date: 12-09-2016 Through 15-09-2016",

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Schmitz, J 2017, Prospects of efficient band-to-band emission in silicon LEDs. in M du Plessis (ed.), Fourth Conference on Sensors, MEMS, and Electro-Optic Systems: 18–20 September 2016, Skukuza, Kruger National Park, South Africa. Proceedings of SPIE, vol. 10036, SPIE, pp. 2-7, 4th Conference on Sensors, MEMS, and Electro-Optic Systems, SMEOS 2016, Skukuza, Kruger National Park, South Africa, 12/09/16. https://doi.org/10.1117/12.2245589

Prospects of efficient band-to-band emission in silicon LEDs. / Schmitz, Jurriaan .

Fourth Conference on Sensors, MEMS, and Electro-Optic Systems: 18–20 September 2016, Skukuza, Kruger National Park, South Africa. ed. / Monuko du Plessis. SPIE, 2017. p. 2-7 (Proceedings of SPIE; Vol. 10036).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - In this paper a review is presented of light emission from forward-biased silicon diodes. After a treatment of the carrier recombination physics governing in this indirect-bandgap material, the article describes important works in this field. Then, routes are proposed for further improvement of the internal quantum efficiency for light emission. A good choice of carrier injection level will limit the impact of both Shockley-Read-Hall recombination and Auger recombination. However, the structural design of the diode has a strong influence on the overall quantum efficiency, as both surface recombination must be dealt with, and contact recombination avoided. New attributes of CMOS such as embedded SiGe offer additional opportunities for silicon LED architectures and their application.

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KW - diodes

KW - EWI-27757

KW - light emitters

KW - IR-103621

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KW - Silicon

KW - CMOS

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DO - 10.1117/12.2245589

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BT - Fourth Conference on Sensors, MEMS, and Electro-Optic Systems

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Y2 - 12 September 2016 through 15 September 2016

ER -

Prospects of efficient band-to-band emission in silicon LEDs

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Keywords

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