Protected 0-π states in SIsFS junctions for Josephson memory and logic

S.V. Bakurskiy; N.V. Klenov; I.I. Soloviev; N.G. Pugach; M. Yu Kupriyanov; A.A. Golubov

doi:10.1063/1.5045490

Protected 0-π states in SIsFS junctions for Josephson memory and logic

S.V. Bakurskiy, N.V. Klenov, I.I. Soloviev, N.G. Pugach, M. Yu Kupriyanov, A.A. Golubov^* (Corresponding Author)

^*Corresponding author for this work

Interfaces and Correlated Electron Systems

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Abstract

We study the peculiarities in current-phase relations (CPR) of the SIsFS junction in the region of 0 to π transition. These CPR consist of two independent branches corresponding to 0- and π-states of the contact. We have found that depending on the transparency of the SIs tunnel barrier, the decrease in the s-layer thickness leads to transformation of the CPR shape going in the two possible ways: either one of the branches exists only in discrete intervals of the phase difference φ or both branches are sinusoidal but differ in the magnitude of their critical currents. We demonstrate that the difference can be as large as 10% under maintaining superconductivity in the s layer. An applicability of these phenomena for memory and logic application is discussed.

Original language	English
Article number	082602
Journal	Applied physics letters
Volume	113
Issue number	8
Early online date	1 Aug 2018
DOIs	https://doi.org/10.1063/1.5045490
Publication status	Published - 20 Aug 2018

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abstract = "We study the peculiarities in current-phase relations (CPR) of the SIsFS junction in the region of 0 to π transition. These CPR consist of two independent branches corresponding to 0- and π-states of the contact. We have found that depending on the transparency of the SIs tunnel barrier, the decrease in the s-layer thickness leads to transformation of the CPR shape going in the two possible ways: either one of the branches exists only in discrete intervals of the phase difference φ or both branches are sinusoidal but differ in the magnitude of their critical currents. We demonstrate that the difference can be as large as 10% under maintaining superconductivity in the s layer. An applicability of these phenomena for memory and logic application is discussed.",

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AU - Bakurskiy, S.V.

AU - Klenov, N.V.

AU - Soloviev, I.I.

AU - Pugach, N.G.

AU - Kupriyanov, M. Yu

AU - Golubov, A.A.

PY - 2018/8/20

Y1 - 2018/8/20

N2 - We study the peculiarities in current-phase relations (CPR) of the SIsFS junction in the region of 0 to π transition. These CPR consist of two independent branches corresponding to 0- and π-states of the contact. We have found that depending on the transparency of the SIs tunnel barrier, the decrease in the s-layer thickness leads to transformation of the CPR shape going in the two possible ways: either one of the branches exists only in discrete intervals of the phase difference φ or both branches are sinusoidal but differ in the magnitude of their critical currents. We demonstrate that the difference can be as large as 10% under maintaining superconductivity in the s layer. An applicability of these phenomena for memory and logic application is discussed.

AB - We study the peculiarities in current-phase relations (CPR) of the SIsFS junction in the region of 0 to π transition. These CPR consist of two independent branches corresponding to 0- and π-states of the contact. We have found that depending on the transparency of the SIs tunnel barrier, the decrease in the s-layer thickness leads to transformation of the CPR shape going in the two possible ways: either one of the branches exists only in discrete intervals of the phase difference φ or both branches are sinusoidal but differ in the magnitude of their critical currents. We demonstrate that the difference can be as large as 10% under maintaining superconductivity in the s layer. An applicability of these phenomena for memory and logic application is discussed.

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Protected 0-π states in SIsFS junctions for Josephson memory and logic

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