We study the peculiarities in current-phase relations (CPR) of the SIsFS junction in the region of 0 to π transition. These CPR consist of two independent branches corresponding to 0- and π-states of the contact. We have found that depending on the transparency of the SIs tunnel barrier, the decrease in the s-layer thickness leads to transformation of the CPR shape going in the two possible ways: either one of the branches exists only in discrete intervals of the phase difference φ or both branches are sinusoidal but differ in the magnitude of their critical currents. We demonstrate that the difference can be as large as 10% under maintaining superconductivity in the s layer. An applicability of these phenomena for memory and logic application is discussed.