Pulsed laser ablation and deposition of ZnS: Cr

Mohammadreza Nematollahi, Xiaodong Yang, Ursula J. Gibson, Turid W. Reenaas

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Abstract

We present a method to deposit films with a range of doping concentrations/dilute alloys, from a single target in pulsed laser deposition (PLD). Cr-doped ZnS films were deposited by ablating a target consisting Cr particles (diameter 20–100 μm) embedded in a ZnS:Cr matrix. The Cr content in the film was varied in the range 2.0–5.0 at.% simply by varying the laser fluence, or by varying the number of pre-ablation pulses. Such a doping/composition range is normally not achieved using a single target in PLD. Details of the target ablation study, which is needed prior to the deposition, are also presented.
Original languageEnglish
Pages (from-to)28-32
Number of pages5
JournalThin solid films
Volume590
DOIs
Publication statusPublished - 2015
Externally publishedYes

Keywords

  • Cr doped ZnS
  • Dilute alloys
  • Doping semiconductors
  • Laser ablation
  • pulsed laser deposition

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