Pulsed laser deposition-induced reduction of SrTiO3 crystals

Matthew L. Scullin; Jayakanth Ravichandran; Choongho Yu; Mark Huijben; Jan Seidel; Arun Majumdar; R. Ramesh

doi:10.1016/j.actamat.2009.09.024

Pulsed laser deposition-induced reduction of SrTiO3 crystals

Matthew L. Scullin, Jayakanth Ravichandran, Choongho Yu, Mark Huijben, Jan Seidel, Arun Majumdar, R. Ramesh

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Abstract

We report a generic method for fast and efficient reduction of strontium titanate (SrTiO3, STO) single crystals by pulsed laser deposition (PLD) of thin-films. The reduction was largely independent of the thin-film material deposited on the crystals. It is shown that thermodynamic conditions (450 °C, 10−7 torr, 10–60 min), which normally reduce STO (0 0 1) substrates to roughly 5 nm into a crystal substrate, can reduce the same crystals throughout their 500 μm thickness when coupled with the PLD. In situ characterization of the STO substrate resistance during thin-film growth is presented. This process opens up the possibility of employing STO substrates as a back-gate in functional oxide devices

Original language	English
Pages (from-to)	457-463
Number of pages	7
Journal	Acta materialia
Volume	58
Issue number	2
DOIs	https://doi.org/10.1016/j.actamat.2009.09.024
Publication status	Published - 2010

Keywords

Perovskites
Thin-films
Laser deposition
Electrical resistivity
Secondary ion mass spectroscopy

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title = "Pulsed laser deposition-induced reduction of SrTiO3 crystals",

abstract = "We report a generic method for fast and efficient reduction of strontium titanate (SrTiO3, STO) single crystals by pulsed laser deposition (PLD) of thin-films. The reduction was largely independent of the thin-film material deposited on the crystals. It is shown that thermodynamic conditions (450 °C, 10−7 torr, 10–60 min), which normally reduce STO (0 0 1) substrates to roughly 5 nm into a crystal substrate, can reduce the same crystals throughout their 500 μm thickness when coupled with the PLD. In situ characterization of the STO substrate resistance during thin-film growth is presented. This process opens up the possibility of employing STO substrates as a back-gate in functional oxide devices",

keywords = "Perovskites, Thin-films, Laser deposition, Electrical resistivity, Secondary ion mass spectroscopy",

author = "Scullin, {Matthew L.} and Jayakanth Ravichandran and Choongho Yu and Mark Huijben and Jan Seidel and Arun Majumdar and R. Ramesh",

year = "2010",

doi = "10.1016/j.actamat.2009.09.024",

language = "English",

volume = "58",

pages = "457--463",

journal = "Acta materialia",

issn = "1359-6454",

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TY - JOUR

T1 - Pulsed laser deposition-induced reduction of SrTiO3 crystals

AU - Scullin, Matthew L.

AU - Ravichandran, Jayakanth

AU - Yu, Choongho

AU - Huijben, Mark

AU - Seidel, Jan

AU - Majumdar, Arun

AU - Ramesh, R.

PY - 2010

Y1 - 2010

N2 - We report a generic method for fast and efficient reduction of strontium titanate (SrTiO3, STO) single crystals by pulsed laser deposition (PLD) of thin-films. The reduction was largely independent of the thin-film material deposited on the crystals. It is shown that thermodynamic conditions (450 °C, 10−7 torr, 10–60 min), which normally reduce STO (0 0 1) substrates to roughly 5 nm into a crystal substrate, can reduce the same crystals throughout their 500 μm thickness when coupled with the PLD. In situ characterization of the STO substrate resistance during thin-film growth is presented. This process opens up the possibility of employing STO substrates as a back-gate in functional oxide devices

AB - We report a generic method for fast and efficient reduction of strontium titanate (SrTiO3, STO) single crystals by pulsed laser deposition (PLD) of thin-films. The reduction was largely independent of the thin-film material deposited on the crystals. It is shown that thermodynamic conditions (450 °C, 10−7 torr, 10–60 min), which normally reduce STO (0 0 1) substrates to roughly 5 nm into a crystal substrate, can reduce the same crystals throughout their 500 μm thickness when coupled with the PLD. In situ characterization of the STO substrate resistance during thin-film growth is presented. This process opens up the possibility of employing STO substrates as a back-gate in functional oxide devices

KW - Perovskites

KW - Thin-films

KW - Laser deposition

KW - Electrical resistivity

KW - Secondary ion mass spectroscopy

U2 - 10.1016/j.actamat.2009.09.024

DO - 10.1016/j.actamat.2009.09.024

M3 - Article

SN - 1359-6454

VL - 58

SP - 457

EP - 463

JO - Acta materialia

JF - Acta materialia

IS - 2

ER -

Pulsed laser deposition-induced reduction of SrTiO3 crystals

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Keywords

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