TY - JOUR
T1 - Pulsed laser deposition of PZT/Pt composite thin films with high dielectric constants
AU - Pham, M.T.N.
AU - Boukamp, B.A.
AU - Rijnders, G.
AU - Bouwmeester, H.J.M.
AU - Blank, D.H.A.
PY - 2004
Y1 - 2004
N2 - PbZr0.53Ti0.47O3 (PZT) thin films containing nanoparticles of Pt (3–10 nm) were produced using pulsed laser deposition (PLD). The Pt content can be tuned by varying the energy density of the laser beam. Phase and microstructure analysis of the thin films was performed using XRD, SEM, TEM and AFM. The electrical properties were investigated by C–V and I–V measurements. The effective dielectric constant of the composite films increased substantially through the Pt dispersion. These films are promising candidates, for instance, for high-density dynamic random access memory (DRAM) devices.
AB - PbZr0.53Ti0.47O3 (PZT) thin films containing nanoparticles of Pt (3–10 nm) were produced using pulsed laser deposition (PLD). The Pt content can be tuned by varying the energy density of the laser beam. Phase and microstructure analysis of the thin films was performed using XRD, SEM, TEM and AFM. The electrical properties were investigated by C–V and I–V measurements. The effective dielectric constant of the composite films increased substantially through the Pt dispersion. These films are promising candidates, for instance, for high-density dynamic random access memory (DRAM) devices.
U2 - 10.1007/s00339-004-2822-8
DO - 10.1007/s00339-004-2822-8
M3 - Article
VL - 79
SP - 907
EP - 910
JO - Applied physics A: Materials science and processing
JF - Applied physics A: Materials science and processing
SN - 0947-8396
IS - 4-6
ER -