Pure-boron chemical-vapor-deposited layers: A new material for silicon device processing

L. K. Nanver, T. L.M. Scholtes, F. Sarubbi, W. B. De Boer, G. Lorito, A. Šakić, S. Milosavljević, C. Mok, L. Shi, S. Nihtianov, K. Buisman

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

15 Citations (Scopus)

Abstract

This paper places focus on the special properties of pure boron chemical-vapor deposition (CVD) thin-film layers that, in several device applications, have recently been shown to augment the potentials of silicon device integration. Besides forming a reliable an efficient dopant source for both ultrashallow and deep p+n junctions, the deposited amorphous boron (α-B) layer itself, even for sub-nm thicknesses, is instrumental in suppressing minority electron injection from the n-region into the p+ contact. Therefore, even for nm-shallow junctions where the current levels mainly will approach high Schottky-like values, the diodes exhibit saturation current levels that can become as low as that of conventional deep junctions. Moreover, the α-B layer has chemical etch properties that make it particularly suitable for integration as the front-entrance window in photodiodes for detecting nm-low-penetration-depth radiation and charged particles.

Original languageEnglish
Title of host publication2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP)
Pages136-139
Number of pages4
ISBN (Electronic)978-1-4244-8401-0
DOIs
Publication statusPublished - 29 Dec 2010
Externally publishedYes
Event18th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2010 - Gainesville, United States
Duration: 28 Sep 20101 Oct 2010
Conference number: 18

Conference

Conference18th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2010
Abbreviated titleRTP 2010
CountryUnited States
CityGainesville
Period28/09/101/10/10

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