Abstract
This paper places focus on the special properties of pure boron chemical-vapor deposition (CVD) thin-film layers that, in several device applications, have recently been shown to augment the potentials of silicon device integration. Besides forming a reliable an efficient dopant source for both ultrashallow and deep p+n junctions, the deposited amorphous boron (α-B) layer itself, even for sub-nm thicknesses, is instrumental in suppressing minority electron injection from the n-region into the p+ contact. Therefore, even for nm-shallow junctions where the current levels mainly will approach high Schottky-like values, the diodes exhibit saturation current levels that can become as low as that of conventional deep junctions. Moreover, the α-B layer has chemical etch properties that make it particularly suitable for integration as the front-entrance window in photodiodes for detecting nm-low-penetration-depth radiation and charged particles.
Original language | English |
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Title of host publication | 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) |
Pages | 136-139 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-4244-8401-0 |
DOIs | |
Publication status | Published - 29 Dec 2010 |
Externally published | Yes |
Event | 18th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2010 - Gainesville, United States Duration: 28 Sep 2010 → 1 Oct 2010 Conference number: 18 |
Conference
Conference | 18th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2010 |
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Abbreviated title | RTP 2010 |
Country/Territory | United States |
City | Gainesville |
Period | 28/09/10 → 1/10/10 |