Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography

F. Sarubbi*, L.K. Nanver, T. L.M. Scholtes, S.N. Nihtianov, F. Scholze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

34 Citations (Scopus)

Abstract

A pure boron chemical vapor deposition (CVD) technology, which forms delta-doped boron surface layers during diborane B2H6 exposure at 700°C, has been successfully used to fabricate silicon-based p+n photodiodes for radiation detection in the extreme-ultra-violet (EUV) spectral range. Outstanding electrical and optical performance has been achieved in terms of extremely low dark current (< 50 pA ateverse bias of 10 V), near theoretical responsivity (0.266 AAV at 3.5 nm wavelength), and excellent stability to high radiation oses (<responsivity degradation after 0.2 MJ/cm2 exposure). Therefore, the diodes are suitable candidates for photon detection functions in the next-generation EUV lithography systems.

Original languageEnglish
Title of host publicationESSDERC 2008
Subtitle of host publicationProceedings of the 38th European Solid-State Device Research Conference
EditorsStephen Hall, Anthony Walton
PublisherIEEE Computer Society
Pages278-281
Number of pages4
ISBN (Print)978-1-4244-2364-4
DOIs
Publication statusPublished - 1 Jan 2008
Externally publishedYes
EventESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, United Kingdom
Duration: 15 Sep 200819 Sep 2008
Conference number: 38

Publication series

NameProceedings of the European Solid State Device Research Conference
ISSN (Print)1930-8876

Conference

ConferenceESSDERC 2008 - 38th European Solid-State Device Research Conference
Abbreviated titleESSDERC 2008
CountryUnited Kingdom
CityEdinburgh
Period15/09/0819/09/08

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