Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography

F. Sarubbi; L.K. Nanver; T. L.M. Scholtes; S.N. Nihtianov; F. Scholze

doi:10.1109/ESSDERC.2008.4681752

Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography

F. Sarubbi^*
, L.K. Nanver
, T. L.M. Scholtes
, S.N. Nihtianov
, F. Scholze

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

39 Citations (Scopus)

Abstract

A pure boron chemical vapor deposition (CVD) technology, which forms delta-doped boron surface layers during diborane B₂H₆ exposure at 700°C, has been successfully used to fabricate silicon-based p⁺n photodiodes for radiation detection in the extreme-ultra-violet (EUV) spectral range. Outstanding electrical and optical performance has been achieved in terms of extremely low dark current (< 50 pA ateverse bias of 10 V), near theoretical responsivity (0.266 AAV at 3.5 nm wavelength), and excellent stability to high radiation oses (<responsivity degradation after 0.2 MJ/cm² exposure). Therefore, the diodes are suitable candidates for photon detection functions in the next-generation EUV lithography systems.

Original language	English
Title of host publication	ESSDERC 2008
Subtitle of host publication	Proceedings of the 38th European Solid-State Device Research Conference
Editors	Stephen Hall, Anthony Walton
Publisher	IEEE
Pages	278-281
Number of pages	4
ISBN (Print)	978-1-4244-2364-4
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681752
Publication status	Published - 1 Jan 2008
Externally published	Yes
Event	ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, United Kingdom Duration: 15 Sept 2008 → 19 Sept 2008 Conference number: 38

Publication series

Name	Proceedings of the European Solid State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	ESSDERC 2008 - 38th European Solid-State Device Research Conference
Abbreviated title	ESSDERC 2008
Country/Territory	United Kingdom
City	Edinburgh
Period	15/09/08 → 19/09/08

Access to Document

10.1109/ESSDERC.2008.4681752

Cite this

Sarubbi, F., Nanver, L. K., Scholtes, T. L. M., Nihtianov, S. N., & Scholze, F. (2008). Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography. In S. Hall, & A. Walton (Eds.), ESSDERC 2008: Proceedings of the 38th European Solid-State Device Research Conference (pp. 278-281). Article 4681752 (Proceedings of the European Solid State Device Research Conference). IEEE. https://doi.org/10.1109/ESSDERC.2008.4681752

@inproceedings{2fa6ecfc60d64f7e8e3a21f4bad09624,

title = "Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography",

abstract = "A pure boron chemical vapor deposition (CVD) technology, which forms delta-doped boron surface layers during diborane B2H6 exposure at 700°C, has been successfully used to fabricate silicon-based p+n photodiodes for radiation detection in the extreme-ultra-violet (EUV) spectral range. Outstanding electrical and optical performance has been achieved in terms of extremely low dark current (< 50 pA ateverse bias of 10 V), near theoretical responsivity (0.266 AAV at 3.5 nm wavelength), and excellent stability to high radiation oses (2 exposure). Therefore, the diodes are suitable candidates for photon detection functions in the next-generation EUV lithography systems.",

author = "F. Sarubbi and L.K. Nanver and Scholtes, \{T. L.M.\} and S.N. Nihtianov and F. Scholze",

year = "2008",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2008.4681752",

language = "English",

isbn = "978-1-4244-2364-4",

series = "Proceedings of the European Solid State Device Research Conference",

publisher = "IEEE",

pages = "278--281",

editor = "Stephen Hall and Anthony Walton",

booktitle = "ESSDERC 2008",

address = "United States",

note = "ESSDERC 2008 - 38th European Solid-State Device Research Conference, ESSDERC 2008 ; Conference date: 15-09-2008 Through 19-09-2008",

}

Sarubbi, F, Nanver, LK, Scholtes, TLM, Nihtianov, SN & Scholze, F 2008, Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography. in S Hall & A Walton (eds), ESSDERC 2008: Proceedings of the 38th European Solid-State Device Research Conference., 4681752, Proceedings of the European Solid State Device Research Conference, IEEE, pp. 278-281, ESSDERC 2008 - 38th European Solid-State Device Research Conference, Edinburgh, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSDERC.2008.4681752

Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography. / Sarubbi, F.; Nanver, L.K.; Scholtes, T. L.M. et al.
ESSDERC 2008: Proceedings of the 38th European Solid-State Device Research Conference. ed. / Stephen Hall; Anthony Walton. IEEE, 2008. p. 278-281 4681752 (Proceedings of the European Solid State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Pure boron-doped photodiodes

T2 - ESSDERC 2008 - 38th European Solid-State Device Research Conference

AU - Sarubbi, F.

AU - Nanver, L.K.

AU - Scholtes, T. L.M.

AU - Nihtianov, S.N.

AU - Scholze, F.

N1 - Conference code: 38

PY - 2008/1/1

Y1 - 2008/1/1

N2 - A pure boron chemical vapor deposition (CVD) technology, which forms delta-doped boron surface layers during diborane B2H6 exposure at 700°C, has been successfully used to fabricate silicon-based p+n photodiodes for radiation detection in the extreme-ultra-violet (EUV) spectral range. Outstanding electrical and optical performance has been achieved in terms of extremely low dark current (< 50 pA ateverse bias of 10 V), near theoretical responsivity (0.266 AAV at 3.5 nm wavelength), and excellent stability to high radiation oses (2 exposure). Therefore, the diodes are suitable candidates for photon detection functions in the next-generation EUV lithography systems.

AB - A pure boron chemical vapor deposition (CVD) technology, which forms delta-doped boron surface layers during diborane B2H6 exposure at 700°C, has been successfully used to fabricate silicon-based p+n photodiodes for radiation detection in the extreme-ultra-violet (EUV) spectral range. Outstanding electrical and optical performance has been achieved in terms of extremely low dark current (< 50 pA ateverse bias of 10 V), near theoretical responsivity (0.266 AAV at 3.5 nm wavelength), and excellent stability to high radiation oses (2 exposure). Therefore, the diodes are suitable candidates for photon detection functions in the next-generation EUV lithography systems.

U2 - 10.1109/ESSDERC.2008.4681752

DO - 10.1109/ESSDERC.2008.4681752

M3 - Conference contribution

AN - SCOPUS:58049105584

SN - 978-1-4244-2364-4

T3 - Proceedings of the European Solid State Device Research Conference

SP - 278

EP - 281

BT - ESSDERC 2008

A2 - Hall, Stephen

A2 - Walton, Anthony

PB - IEEE

Y2 - 15 September 2008 through 19 September 2008

ER -

Sarubbi F, Nanver LK, Scholtes TLM, Nihtianov SN, Scholze F. Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography. In Hall S, Walton A, editors, ESSDERC 2008: Proceedings of the 38th European Solid-State Device Research Conference. IEEE. 2008. p. 278-281. 4681752. (Proceedings of the European Solid State Device Research Conference). doi: 10.1109/ESSDERC.2008.4681752

Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography

Abstract

Publication series

Conference

Access to Document

Fingerprint

Cite this