Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

L. K. Nanver*, A. Sammak, V. Mohammadi, K. R.C. Mok, L. Qi, A. Šakic, N. Golshani, J. Derakhshandeh, T. M.L. Scholtes, W. B. De Boer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

15 Citations (Scopus)

Abstract

Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical behavior together with their electrical, optical and chemical robustness have lead to cutting-edge application as photodiodes for detecting low-penetration-depth beams, as for example in EUV lithography and low-energy electron SEM imaging. Of key importance is the effectively high Gummel number of the p+-region that provides low saturation currents despite the shallowness of the junctions. Based on experimental evidence it is proposed here that this is related to the formation of a practically complete surface coverage of acceptor states as an interface property of PureB on Si and PureGa on both Si and Ge.

Original languageEnglish
Title of host publicationMicroelectronics Technology and Devices, SBMicro 2012
Pages25-33
Number of pages9
Edition1
DOIs
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event27th Symposium on MicroelectronicsTechnology and Devices, SBMicro 2012 - Brasilia, Brazil
Duration: 30 Aug 20122 Sep 2012

Publication series

NameECS Transactions
Number1
Volume49
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference27th Symposium on MicroelectronicsTechnology and Devices, SBMicro 2012
Abbreviated titleSBMicro 2012
CountryBrazil
CityBrasilia
Period30/08/122/09/12

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Nanver, L. K., Sammak, A., Mohammadi, V., Mok, K. R. C., Qi, L., Šakic, A., ... De Boer, W. B. (2009). Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices. In Microelectronics Technology and Devices, SBMicro 2012 (1 ed., pp. 25-33). (ECS Transactions; Vol. 49, No. 1). https://doi.org/10.1149/04901.0025ecst