PureB low-energy electron detectors with closely-packed photodiodes integrated on locally-thinned high-resistivity silicon

Agata Sakic*, Silvana Milosavljevic, Wim H.A. Wien, Johannes M.W. Laros, Lis K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

A Pure Boron (PureB) photodiode technology is developed for low-energy (down to 200 eV) electron detectors, and implemented in a versatile production-ripe process for highspeed detectors for Scanning Electron Microscopy (SEM). It is here investigated with respect to transfer from the existing low-resistivity-silicon (LRS) process to a locally-thinned high-resistivity- silicon (HRS) process. In this way a lower capacitance, i.e., a wider low-doped region, can be achieved. A trade-off must be made to meet the demands of optimized SEM imaging: the larger lateral depletion of each photodiode can be in conflict with the requirement to have the detector divided into arrays of several electrically-separated closely-packed photodiodes. Here a 37% reduction in total capacitance is achieved, with junction capacitance of < 1 pF/mm 2, while detection efficiency, series resistance, dark current, and packing density are kept within specifications.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012
Subtitle of host publicationProceedings
PublisherIEEE
ISBN (Electronic)978-1-4577-1765-9, 978-1-4577-1767-3
ISBN (Print)978-1-4577-1766-6
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
Event2012 IEEE Sensors - Taipei International Convention Center, Taipei, Taiwan, Province of China
Duration: 28 Oct 201231 Oct 2012

Conference

Conference2012 IEEE Sensors
CountryTaiwan, Province of China
CityTaipei
Period28/10/1231/10/12

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