Abstract
The quasiparticle lifetimes and tunneltimes in SIS tunnel junctions are essential parameters in the development of these devices for high resolution X-ray spectroscopy. We present a simple analytical model which allows us to calculate both the risetime and the total charge of the integrated tunnel current following an X-ray event. Simultaneous measurement of both the total charge and the risetime thus becomes a useful diagnostic tool for quantitative analysis. We have applied the model to recent X-ray measurements on a Nb/AlOx SIS junction. We find that the energy resolution achieved in this device is mainly limited by variations in the thickness of the counter electrode.
Original language | English |
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Pages (from-to) | 72-74 |
Journal | Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment |
Volume | 370 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1996 |