We present the first measurement results of a power sensor for radio frequency (rf) signals (50 kHz - 40 GHz) with almost no dissipation during the measurement. This sensor is, therefore, a 'through' power sensor, that means that the rf signal is available during the measurement of its power. The power detection has been realized by measuring capacitively the movement of a grounded aluminum membrane, which is suspended above the transmission line carrying the rf signal. The power sensor is thus a capacitive MEMS technology based sensor. The fabrication is done by aluminum surface micromachining on an AF45 glass wafer. We measured the capacitance as a function of the applied rf power and found a linear relationship as predicted from theory.
|Number of pages||4|
|Publication status||Published - Oct 2003|
|Event||2003 IEEE Sensors: The 2nd Conference on Sensors - Toronto, Canada|
Duration: 22 Oct 2003 → 24 Oct 2003
|Conference||2003 IEEE Sensors|
|Period||22/10/03 → 24/10/03|