Radio frequency power sensor based on MEMS technology

L.J. Fernandez, Eelke Visser, J. Sesé, Remco J. Wiegerink, Henricus V. Jansen, Jakob Flokstra, Michael Curt Elwenspoek

Research output: Contribution to conferencePaperpeer-review

39 Citations (Scopus)
179 Downloads (Pure)


We present the first measurement results of a power sensor for radio frequency (rf) signals (50 kHz - 40 GHz) with almost no dissipation during the measurement. This sensor is, therefore, a 'through' power sensor, that means that the rf signal is available during the measurement of its power. The power detection has been realized by measuring capacitively the movement of a grounded aluminum membrane, which is suspended above the transmission line carrying the rf signal. The power sensor is thus a capacitive MEMS technology based sensor. The fabrication is done by aluminum surface micromachining on an AF45 glass wafer. We measured the capacitance as a function of the applied rf power and found a linear relationship as predicted from theory.
Original languageEnglish
Number of pages4
Publication statusPublished - Oct 2003
Event2003 IEEE Sensors: The 2nd Conference on Sensors - Toronto, Canada
Duration: 22 Oct 200324 Oct 2003


Conference2003 IEEE Sensors
Internet address


  • METIS-216956
  • IR-41029
  • EWI-11183


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