Radio frequency power sensor based on MEMS technology

L.J. Fernandez, Eelke Visser, J. Sesé, Remco J. Wiegerink, Henricus V. Jansen, Jan Flokstra, Jakob Flokstra, Michael Curt Elwenspoek

Research output: Contribution to conferencePaperAcademicpeer-review

33 Citations (Scopus)
39 Downloads (Pure)

Abstract

We present the first measurement results of a power sensor for radio frequency (rf) signals (50 kHz - 40 GHz) with almost no dissipation during the measurement. This sensor is, therefore, a 'through' power sensor, that means that the rf signal is available during the measurement of its power. The power detection has been realized by measuring capacitively the movement of a grounded aluminum membrane, which is suspended above the transmission line carrying the rf signal. The power sensor is thus a capacitive MEMS technology based sensor. The fabrication is done by aluminum surface micromachining on an AF45 glass wafer. We measured the capacitance as a function of the applied rf power and found a linear relationship as predicted from theory.
Original languageUndefined
Pages549-552
Number of pages4
DOIs
Publication statusPublished - Oct 2003
Event2003 IEEE Sensors: The 2nd Conference on Sensors - Toronto, Canada
Duration: 22 Oct 200324 Oct 2003
http://ewh.ieee.org/conf/sensors2003/

Conference

Conference2003 IEEE Sensors
CountryCanada
CityToronto
Period22/10/0324/10/03
Internet address

Keywords

  • METIS-216956
  • IR-41029
  • EWI-11183

Cite this

Fernandez, L. J., Visser, E., Sesé, J., Wiegerink, R. J., Jansen, H. V., Flokstra, J., ... Elwenspoek, M. C. (2003). Radio frequency power sensor based on MEMS technology. 549-552. Paper presented at 2003 IEEE Sensors, Toronto, Canada. https://doi.org/10.1109/ICSENS.2003.1278998
Fernandez, L.J. ; Visser, Eelke ; Sesé, J. ; Wiegerink, Remco J. ; Jansen, Henricus V. ; Flokstra, Jan ; Flokstra, Jakob ; Elwenspoek, Michael Curt. / Radio frequency power sensor based on MEMS technology. Paper presented at 2003 IEEE Sensors, Toronto, Canada.4 p.
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title = "Radio frequency power sensor based on MEMS technology",
abstract = "We present the first measurement results of a power sensor for radio frequency (rf) signals (50 kHz - 40 GHz) with almost no dissipation during the measurement. This sensor is, therefore, a 'through' power sensor, that means that the rf signal is available during the measurement of its power. The power detection has been realized by measuring capacitively the movement of a grounded aluminum membrane, which is suspended above the transmission line carrying the rf signal. The power sensor is thus a capacitive MEMS technology based sensor. The fabrication is done by aluminum surface micromachining on an AF45 glass wafer. We measured the capacitance as a function of the applied rf power and found a linear relationship as predicted from theory.",
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author = "L.J. Fernandez and Eelke Visser and J. Ses{\'e} and Wiegerink, {Remco J.} and Jansen, {Henricus V.} and Jan Flokstra and Jakob Flokstra and Elwenspoek, {Michael Curt}",
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language = "Undefined",
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note = "null ; Conference date: 22-10-2003 Through 24-10-2003",
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Fernandez, LJ, Visser, E, Sesé, J, Wiegerink, RJ, Jansen, HV, Flokstra, J, Flokstra, J & Elwenspoek, MC 2003, 'Radio frequency power sensor based on MEMS technology' Paper presented at 2003 IEEE Sensors, Toronto, Canada, 22/10/03 - 24/10/03, pp. 549-552. https://doi.org/10.1109/ICSENS.2003.1278998

Radio frequency power sensor based on MEMS technology. / Fernandez, L.J.; Visser, Eelke; Sesé, J.; Wiegerink, Remco J.; Jansen, Henricus V.; Flokstra, Jan; Flokstra, Jakob; Elwenspoek, Michael Curt.

2003. 549-552 Paper presented at 2003 IEEE Sensors, Toronto, Canada.

Research output: Contribution to conferencePaperAcademicpeer-review

TY - CONF

T1 - Radio frequency power sensor based on MEMS technology

AU - Fernandez, L.J.

AU - Visser, Eelke

AU - Sesé, J.

AU - Wiegerink, Remco J.

AU - Jansen, Henricus V.

AU - Flokstra, Jan

AU - Flokstra, Jakob

AU - Elwenspoek, Michael Curt

PY - 2003/10

Y1 - 2003/10

N2 - We present the first measurement results of a power sensor for radio frequency (rf) signals (50 kHz - 40 GHz) with almost no dissipation during the measurement. This sensor is, therefore, a 'through' power sensor, that means that the rf signal is available during the measurement of its power. The power detection has been realized by measuring capacitively the movement of a grounded aluminum membrane, which is suspended above the transmission line carrying the rf signal. The power sensor is thus a capacitive MEMS technology based sensor. The fabrication is done by aluminum surface micromachining on an AF45 glass wafer. We measured the capacitance as a function of the applied rf power and found a linear relationship as predicted from theory.

AB - We present the first measurement results of a power sensor for radio frequency (rf) signals (50 kHz - 40 GHz) with almost no dissipation during the measurement. This sensor is, therefore, a 'through' power sensor, that means that the rf signal is available during the measurement of its power. The power detection has been realized by measuring capacitively the movement of a grounded aluminum membrane, which is suspended above the transmission line carrying the rf signal. The power sensor is thus a capacitive MEMS technology based sensor. The fabrication is done by aluminum surface micromachining on an AF45 glass wafer. We measured the capacitance as a function of the applied rf power and found a linear relationship as predicted from theory.

KW - METIS-216956

KW - IR-41029

KW - EWI-11183

U2 - 10.1109/ICSENS.2003.1278998

DO - 10.1109/ICSENS.2003.1278998

M3 - Paper

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EP - 552

ER -

Fernandez LJ, Visser E, Sesé J, Wiegerink RJ, Jansen HV, Flokstra J et al. Radio frequency power sensor based on MEMS technology. 2003. Paper presented at 2003 IEEE Sensors, Toronto, Canada. https://doi.org/10.1109/ICSENS.2003.1278998