Ramp‐type junction parameter control by Ga doping of PrBa2Cu3O7−δ barriers

M.A.J. Verhoeven; G.J. Gerritsma; H. Rogalla; A.A. Golubov

doi:10.1063/1.117912

Ramp‐type junction parameter control by Ga doping of PrBa₂Cu₃O_7−δ barriers

M.A.J. Verhoeven, G.J. Gerritsma, H. Rogalla, A.A. Golubov

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We analyzed the transport of charge carriers across PrBa₂Cu_3−xGaxO_7−δ (PBCGO) barriers as a function of barrier thickness, Ga‐doping level, temperature, and bias voltage. It was found that by Ga doping, the normal state resistance (R_n) of the junctions was systematically increased, while the critical current (I_c) remained constant. We argue that pair transport takes place by direct tunneling, whereas the quasiparticles have access to channels formed by one or more localized states inside the barrier. By Ga doping the I_cRn products were increased, up to 8mV at 4.2K for junctions with 8nm thick PrBa₂Cu_2.6Ga_0.4O_7−δ barriers.

Original language	English
Pages (from-to)	848-850
Number of pages	3
Journal	Applied physics letters
Volume	69
Issue number	6
DOIs	https://doi.org/10.1063/1.117912
Publication status	Published - 1996

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title = "Ramp‐type junction parameter control by Ga doping of PrBa2Cu3O7−δ barriers",

abstract = "We analyzed the transport of charge carriers across PrBa2Cu3−xGaxO7−δ (PBCGO) barriers as a function of barrier thickness, Ga‐doping level, temperature, and bias voltage. It was found that by Ga doping, the normal state resistance (Rn) of the junctions was systematically increased, while the critical current (Ic) remained constant. We argue that pair transport takes place by direct tunneling, whereas the quasiparticles have access to channels formed by one or more localized states inside the barrier. By Ga doping the IcRn products were increased, up to 8mV at 4.2K for junctions with 8nm thick PrBa2Cu2.6Ga0.4O7−δ barriers.",

author = "M.A.J. Verhoeven and G.J. Gerritsma and H. Rogalla and A.A. Golubov",

year = "1996",

doi = "10.1063/1.117912",

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pages = "848--850",

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T1 - Ramp‐type junction parameter control by Ga doping of PrBa2Cu3O7−δ barriers

AU - Verhoeven, M.A.J.

AU - Gerritsma, G.J.

AU - Rogalla, H.

AU - Golubov, A.A.

PY - 1996

Y1 - 1996

N2 - We analyzed the transport of charge carriers across PrBa2Cu3−xGaxO7−δ (PBCGO) barriers as a function of barrier thickness, Ga‐doping level, temperature, and bias voltage. It was found that by Ga doping, the normal state resistance (Rn) of the junctions was systematically increased, while the critical current (Ic) remained constant. We argue that pair transport takes place by direct tunneling, whereas the quasiparticles have access to channels formed by one or more localized states inside the barrier. By Ga doping the IcRn products were increased, up to 8mV at 4.2K for junctions with 8nm thick PrBa2Cu2.6Ga0.4O7−δ barriers.

AB - We analyzed the transport of charge carriers across PrBa2Cu3−xGaxO7−δ (PBCGO) barriers as a function of barrier thickness, Ga‐doping level, temperature, and bias voltage. It was found that by Ga doping, the normal state resistance (Rn) of the junctions was systematically increased, while the critical current (Ic) remained constant. We argue that pair transport takes place by direct tunneling, whereas the quasiparticles have access to channels formed by one or more localized states inside the barrier. By Ga doping the IcRn products were increased, up to 8mV at 4.2K for junctions with 8nm thick PrBa2Cu2.6Ga0.4O7−δ barriers.

U2 - 10.1063/1.117912

DO - 10.1063/1.117912

M3 - Article

VL - 69

SP - 848

EP - 850

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 6

ER -

Ramp‐type junction parameter control by Ga doping of PrBa2Cu3O7−δ barriers

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Ramp‐type junction parameter control by Ga doping of PrBa₂Cu₃O_7−δ barriers