Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces

H. Feil; H.J.W. Zandvliet; M.-H. Tsai; John D. Dow; I.S.T. Tsong

doi:10.1103/PhysRevLett.69.3076

Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces

H. Feil, H.J.W. Zandvliet, M.-H. Tsai, John D. Dow, I.S.T. Tsong

Physics of Interfaces and Nanomaterials

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Abstract

Scanning tunneling microscopy STM images of Si(100)-(2×1) surfaces bombarded by low-dose 3-keV Ar+ ions showed random defects which ordered into line defects perpendicular to the dimer rows upon annealing at elevated temperatures. Molecular-dynamics simulations were performed to explain the shapes and sizes of the observed random defects and also to examine the stability of ordered defects. Our simulations showed good agreement with STM observations.

Original language	English
Pages (from-to)	3076-3079
Number of pages	4
Journal	Physical review letters
Volume	69
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevLett.69.3076 https://doi.org/10.1103/PhysRevLett.69.3076
Publication status	Published - 1992

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title = "Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces",

abstract = "Scanning tunneling microscopy STM images of Si(100)-(2×1) surfaces bombarded by low-dose 3-keV Ar+ ions showed random defects which ordered into line defects perpendicular to the dimer rows upon annealing at elevated temperatures. Molecular-dynamics simulations were performed to explain the shapes and sizes of the observed random defects and also to examine the stability of ordered defects. Our simulations showed good agreement with STM observations.",

author = "H. Feil and H.J.W. Zandvliet and M.-H. Tsai and Dow, {John D.} and I.S.T. Tsong",

year = "1992",

doi = "10.1103/PhysRevLett.69.3076",

language = "English",

volume = "69",

pages = "3076--3079",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

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T1 - Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces

AU - Feil, H.

AU - Zandvliet, H.J.W.

AU - Tsai, M.-H.

AU - Dow, John D.

AU - Tsong, I.S.T.

PY - 1992

Y1 - 1992

N2 - Scanning tunneling microscopy STM images of Si(100)-(2×1) surfaces bombarded by low-dose 3-keV Ar+ ions showed random defects which ordered into line defects perpendicular to the dimer rows upon annealing at elevated temperatures. Molecular-dynamics simulations were performed to explain the shapes and sizes of the observed random defects and also to examine the stability of ordered defects. Our simulations showed good agreement with STM observations.

AB - Scanning tunneling microscopy STM images of Si(100)-(2×1) surfaces bombarded by low-dose 3-keV Ar+ ions showed random defects which ordered into line defects perpendicular to the dimer rows upon annealing at elevated temperatures. Molecular-dynamics simulations were performed to explain the shapes and sizes of the observed random defects and also to examine the stability of ordered defects. Our simulations showed good agreement with STM observations.

U2 - 10.1103/PhysRevLett.69.3076

DO - 10.1103/PhysRevLett.69.3076

M3 - Article

SN - 0031-9007

VL - 69

SP - 3076

EP - 3079

JO - Physical review letters

JF - Physical review letters

IS - 21

ER -

Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces

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