Random telegraph signal phenomena in avalanche mode diodes: application to SPADs

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    Abstract

    The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche. The statistical properties also allow to more accurately describe e.g. the value of the self sustaining avalanche current that is crucial in designing optical detection systems using avalanche photo diodes or single photon avalanche diodes (SPADs). More accurate modelling is shown to allow improving on e.g. count rates, dead time and afterpulsing in quenching and recharge circuits for SPADs. Measurements are performed on diodes in a 140 nm SOI CMOS technology.
    Original languageEnglish
    Title of host publication2016 46th European Solid-State Device Research Conference (ESSDERC)
    Place of PublicationUSA
    PublisherIEEE
    Pages264-267
    Number of pages4
    ISBN (Electronic)978-1-5090-2969-3
    ISBN (Print)978-1-5090-2970-9
    DOIs
    Publication statusPublished - 14 Sep 2016
    Event46th European Solid-State Device Research Conference, ESSDERC 2016 - Lausanne, Switzerland
    Duration: 12 Sep 201615 Sep 2016
    Conference number: 46
    http://archiveweb.epfl.ch/esscirc-essderc2016.epfl.ch/

    Conference

    Conference46th European Solid-State Device Research Conference, ESSDERC 2016
    Abbreviated titleESSDERC
    CountrySwitzerland
    CityLausanne
    Period12/09/1615/09/16
    Internet address

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    Keywords

    • Latching current
    • IR-101815
    • METIS-318553
    • EWI-27308
    • Avalanche breakdown
    • Breakdown voltage
    • SPAD
    • Self-sustaining avalanche current
    • RTS
    • Random Telegraph Noise

    Cite this

    Agarwal, V. V., Annema, A. J., Dutta, S., Hueting, R. J. E., Nanver, L. K., & Nauta, B. (2016). Random telegraph signal phenomena in avalanche mode diodes: application to SPADs. In 2016 46th European Solid-State Device Research Conference (ESSDERC) (pp. 264-267). USA: IEEE. https://doi.org/10.1109/ESSDERC.2016.7599636