Random telegraph signal phenomena in avalanche mode diodes: application to SPADs

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche. The statistical properties also allow to more accurately describe e.g. the value of the self sustaining avalanche current that is crucial in designing optical detection systems using avalanche photo diodes or single photon avalanche diodes (SPADs). More accurate modelling is shown to allow improving on e.g. count rates, dead time and afterpulsing in quenching and recharge circuits for SPADs. Measurements are performed on diodes in a 140 nm SOI CMOS technology.
Original languageEnglish
Title of host publication2016 46th European Solid-State Device Research Conference (ESSDERC)
Place of PublicationUSA
PublisherIEEE
Pages264-267
Number of pages4
ISBN (Electronic)978-1-5090-2969-3
ISBN (Print)978-1-5090-2970-9
DOIs
Publication statusPublished - 14 Sep 2016
Event46th European Solid-State Device Research Conference, ESSDERC 2016 - Lausanne, Switzerland
Duration: 12 Sep 201615 Sep 2016
Conference number: 46
http://archiveweb.epfl.ch/esscirc-essderc2016.epfl.ch/

Conference

Conference46th European Solid-State Device Research Conference, ESSDERC 2016
Abbreviated titleESSDERC
CountrySwitzerland
CityLausanne
Period12/09/1615/09/16
Internet address

Fingerprint

avalanche diodes
avalanches
diodes
photons
sustaining
SOI (semiconductors)
electrical faults
CMOS
quenching
electric potential

Keywords

  • Latching current
  • IR-101815
  • METIS-318553
  • EWI-27308
  • Avalanche breakdown
  • Breakdown voltage
  • SPAD
  • Self-sustaining avalanche current
  • RTS
  • Random Telegraph Noise

Cite this

Agarwal, V. V., Annema, A. J., Dutta, S., Hueting, R. J. E., Nanver, L. K., & Nauta, B. (2016). Random telegraph signal phenomena in avalanche mode diodes: application to SPADs. In 2016 46th European Solid-State Device Research Conference (ESSDERC) (pp. 264-267). USA: IEEE. https://doi.org/10.1109/ESSDERC.2016.7599636
Agarwal, Vishal Vishal ; Annema, Anne J. ; Dutta, Satadal ; Hueting, Raymond Josephus Engelbart ; Nanver, Lis Karen ; Nauta, Bram. / Random telegraph signal phenomena in avalanche mode diodes : application to SPADs. 2016 46th European Solid-State Device Research Conference (ESSDERC). USA : IEEE, 2016. pp. 264-267
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title = "Random telegraph signal phenomena in avalanche mode diodes: application to SPADs",
abstract = "The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche. The statistical properties also allow to more accurately describe e.g. the value of the self sustaining avalanche current that is crucial in designing optical detection systems using avalanche photo diodes or single photon avalanche diodes (SPADs). More accurate modelling is shown to allow improving on e.g. count rates, dead time and afterpulsing in quenching and recharge circuits for SPADs. Measurements are performed on diodes in a 140 nm SOI CMOS technology.",
keywords = "Latching current, IR-101815, METIS-318553, EWI-27308, Avalanche breakdown, Breakdown voltage, SPAD, Self-sustaining avalanche current, RTS, Random Telegraph Noise",
author = "Agarwal, {Vishal Vishal} and Annema, {Anne J.} and Satadal Dutta and Hueting, {Raymond Josephus Engelbart} and Nanver, {Lis Karen} and Bram Nauta",
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language = "English",
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Agarwal, VV, Annema, AJ, Dutta, S, Hueting, RJE, Nanver, LK & Nauta, B 2016, Random telegraph signal phenomena in avalanche mode diodes: application to SPADs. in 2016 46th European Solid-State Device Research Conference (ESSDERC). IEEE, USA, pp. 264-267, 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, 12/09/16. https://doi.org/10.1109/ESSDERC.2016.7599636

Random telegraph signal phenomena in avalanche mode diodes : application to SPADs. / Agarwal, Vishal Vishal; Annema, Anne J.; Dutta, Satadal; Hueting, Raymond Josephus Engelbart; Nanver, Lis Karen; Nauta, Bram.

2016 46th European Solid-State Device Research Conference (ESSDERC). USA : IEEE, 2016. p. 264-267.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Random telegraph signal phenomena in avalanche mode diodes

T2 - application to SPADs

AU - Agarwal, Vishal Vishal

AU - Annema, Anne J.

AU - Dutta, Satadal

AU - Hueting, Raymond Josephus Engelbart

AU - Nanver, Lis Karen

AU - Nauta, Bram

PY - 2016/9/14

Y1 - 2016/9/14

N2 - The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche. The statistical properties also allow to more accurately describe e.g. the value of the self sustaining avalanche current that is crucial in designing optical detection systems using avalanche photo diodes or single photon avalanche diodes (SPADs). More accurate modelling is shown to allow improving on e.g. count rates, dead time and afterpulsing in quenching and recharge circuits for SPADs. Measurements are performed on diodes in a 140 nm SOI CMOS technology.

AB - The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche. The statistical properties also allow to more accurately describe e.g. the value of the self sustaining avalanche current that is crucial in designing optical detection systems using avalanche photo diodes or single photon avalanche diodes (SPADs). More accurate modelling is shown to allow improving on e.g. count rates, dead time and afterpulsing in quenching and recharge circuits for SPADs. Measurements are performed on diodes in a 140 nm SOI CMOS technology.

KW - Latching current

KW - IR-101815

KW - METIS-318553

KW - EWI-27308

KW - Avalanche breakdown

KW - Breakdown voltage

KW - SPAD

KW - Self-sustaining avalanche current

KW - RTS

KW - Random Telegraph Noise

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DO - 10.1109/ESSDERC.2016.7599636

M3 - Conference contribution

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BT - 2016 46th European Solid-State Device Research Conference (ESSDERC)

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Agarwal VV, Annema AJ, Dutta S, Hueting RJE, Nanver LK, Nauta B. Random telegraph signal phenomena in avalanche mode diodes: application to SPADs. In 2016 46th European Solid-State Device Research Conference (ESSDERC). USA: IEEE. 2016. p. 264-267 https://doi.org/10.1109/ESSDERC.2016.7599636