Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes

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    Abstract

    An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.
    Original languageEnglish
    Pages (from-to)642-652
    Number of pages11
    JournalJournal of the Electron Devices Society
    Volume6
    Issue number1
    DOIs
    Publication statusPublished - 10 May 2018

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