TY - JOUR
T1 - Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes
AU - Agarwal, Vishal
AU - Annema, Anne J.
AU - Dutta, Satadal
AU - Hueting, Raymond Josephus Engelbart
AU - Nanver, Lis Karen
AU - Nauta, Bram
PY - 2018/5/10
Y1 - 2018/5/10
N2 - An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.
AB - An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.
U2 - 10.1109/JEDS.2018.2835153
DO - 10.1109/JEDS.2018.2835153
M3 - Article
SN - 2168-6734
VL - 6
SP - 642
EP - 652
JO - Journal of the Electron Devices Society
JF - Journal of the Electron Devices Society
IS - 1
ER -