Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes

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Abstract

An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.
Original languageEnglish
Pages (from-to)642-652
Number of pages11
JournalJournal of the Electron Devices Society
Volume6
Issue number1
DOIs
Publication statusPublished - 10 May 2018

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Avalanches
Avalanche diodes
Telegraph
Silicon
Defects
Electric Impedance
Time domain analysis
Hot Temperature
Heat resistance
Experiments

Cite this

@article{46858f8b0fec472e996ac705390e36b6,
title = "Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes",
abstract = "An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.",
author = "Vishal Agarwal and Annema, {Anne J.} and Satadal Dutta and Hueting, {Raymond Josephus Engelbart} and Nanver, {Lis Karen} and Bram Nauta",
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Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes. / Agarwal, Vishal ; Annema, Anne J.; Dutta, Satadal ; Hueting, Raymond Josephus Engelbart; Nanver, Lis Karen; Nauta, Bram .

In: Journal of the Electron Devices Society, Vol. 6, No. 1, 10.05.2018, p. 642-652.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes

AU - Agarwal, Vishal

AU - Annema, Anne J.

AU - Dutta, Satadal

AU - Hueting, Raymond Josephus Engelbart

AU - Nanver, Lis Karen

AU - Nauta, Bram

PY - 2018/5/10

Y1 - 2018/5/10

N2 - An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.

AB - An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.

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