Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes

Vishal Agarwal, Anne J. Annema, Satadal Dutta, Raymond Josephus Engelbart Hueting, Lis Karen Nanver, Bram Nauta

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)
48 Downloads (Pure)

Abstract

An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.
Original languageEnglish
Pages (from-to)642-652
Number of pages11
JournalJournal of the Electron Devices Society
Volume6
Issue number1
DOIs
Publication statusPublished - 10 May 2018

Fingerprint

Avalanches
Avalanche diodes
Telegraph
Silicon
Defects
Electric Impedance
Time domain analysis
Hot Temperature
Heat resistance
Experiments

Cite this

Agarwal, Vishal ; Annema, Anne J. ; Dutta, Satadal ; Hueting, Raymond Josephus Engelbart ; Nanver, Lis Karen ; Nauta, Bram . / Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes. In: Journal of the Electron Devices Society. 2018 ; Vol. 6, No. 1. pp. 642-652.
@article{46858f8b0fec472e996ac705390e36b6,
title = "Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes",
abstract = "An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.",
author = "Vishal Agarwal and Annema, {Anne J.} and Satadal Dutta and Hueting, {Raymond Josephus Engelbart} and Nanver, {Lis Karen} and Bram Nauta",
year = "2018",
month = "5",
day = "10",
doi = "10.1109/JEDS.2018.2835153",
language = "English",
volume = "6",
pages = "642--652",
journal = "Journal of the Electron Devices Society",
issn = "2168-6734",
publisher = "IEEE",
number = "1",

}

Agarwal, V, Annema, AJ, Dutta, S, Hueting, RJE, Nanver, LK & Nauta, B 2018, 'Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes' Journal of the Electron Devices Society, vol. 6, no. 1, pp. 642-652. https://doi.org/10.1109/JEDS.2018.2835153

Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes. / Agarwal, Vishal ; Annema, Anne J.; Dutta, Satadal ; Hueting, Raymond Josephus Engelbart; Nanver, Lis Karen; Nauta, Bram .

In: Journal of the Electron Devices Society, Vol. 6, No. 1, 10.05.2018, p. 642-652.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes

AU - Agarwal, Vishal

AU - Annema, Anne J.

AU - Dutta, Satadal

AU - Hueting, Raymond Josephus Engelbart

AU - Nanver, Lis Karen

AU - Nauta, Bram

PY - 2018/5/10

Y1 - 2018/5/10

N2 - An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.

AB - An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the “decaying” and the “constant” type. These RTSs are analyzed using a model for defects reported earlier, from which their ohmic series resistance and geometrical parameters have been estimated. The results indicate that breakdown of a relatively small area defect results in a “decaying” amplitude type of RTS, and breakdown of a relatively large area defect results in a “constant” amplitude type of RTS. These two types can be explained by the differences in the thermal resistance, which is higher for the former.

U2 - 10.1109/JEDS.2018.2835153

DO - 10.1109/JEDS.2018.2835153

M3 - Article

VL - 6

SP - 642

EP - 652

JO - Journal of the Electron Devices Society

JF - Journal of the Electron Devices Society

SN - 2168-6734

IS - 1

ER -

Agarwal V, Annema AJ, Dutta S, Hueting RJE, Nanver LK, Nauta B. Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes. Journal of the Electron Devices Society. 2018 May 10;6(1):642-652. https://doi.org/10.1109/JEDS.2018.2835153

Access to Document

  • randomFinal published version, 2 MB