TY - GEN
T1 - Range pre-selection sampling technique to reduce input drive energy for SAR ADCs
AU - Bindra, Harijot Singh
AU - Lechevallier, Joeri Boris
AU - Annema, Anne Johan
AU - Louwsma, S.M.
AU - van Tuijl, Adrianus Johannes Maria
AU - Nauta, Bram
PY - 2017/11/8
Y1 - 2017/11/8
N2 - A Range Pre-selection Sampling (RPS) technique is introduced to reduce the input drive energy for SAR ADCs and is applied to a 10-bit 2MS/s SAR ADC in 65nm CMOS in this paper. Using the proposed RPS technique, the peak input sampling current and hence the input drive power requirement is reduced by a factor 2.4 as compared to conventional sampling (CS). Considering an ideal Class A operation for the buffer circuit driving the ADC, this translates into a minimum (theoretical) driver power consumption of 50μW for our RPS based ADC whereas it is 130μW for the conventional sampling, both much larger than the ADC power consumption of 3.25μW at 1MS/s operation. Our ADC occupies an area of 0.08 mm2and achieves an SFDR of 64 dB, an SNDR of 55 dB with a Walden Figure of Merit, FoMw of 6.8fJ/conversion-step at up-to 2MS/s.
AB - A Range Pre-selection Sampling (RPS) technique is introduced to reduce the input drive energy for SAR ADCs and is applied to a 10-bit 2MS/s SAR ADC in 65nm CMOS in this paper. Using the proposed RPS technique, the peak input sampling current and hence the input drive power requirement is reduced by a factor 2.4 as compared to conventional sampling (CS). Considering an ideal Class A operation for the buffer circuit driving the ADC, this translates into a minimum (theoretical) driver power consumption of 50μW for our RPS based ADC whereas it is 130μW for the conventional sampling, both much larger than the ADC power consumption of 3.25μW at 1MS/s operation. Our ADC occupies an area of 0.08 mm2and achieves an SFDR of 64 dB, an SNDR of 55 dB with a Walden Figure of Merit, FoMw of 6.8fJ/conversion-step at up-to 2MS/s.
UR - https://ieeexplore.ieee.org/document/8240255/
U2 - 10.1109/ASSCC.2017.8240255
DO - 10.1109/ASSCC.2017.8240255
M3 - Conference contribution
SN - 978-1-5386-3179-9
SP - 217
EP - 220
BT - IEEE Asian Solid-State Circuits Conference (A-SSCC)
PB - IEEE
CY - Piscataway, NJ
T2 - IEEE Asian Solid-State Circuits Conference, A-SSCC 2017
Y2 - 6 November 2017 through 8 November 2017
ER -