Rare-earth ion doped Al2O3 for active integrated photonics

Ward A. P. M. Hendriks, Lantian Chang, Carlijn I. Van Emmerik, Jinfeng Mu, Michiel De Goede, Meindert Dijkstra, Sonia M. Garcia-blanco*

*Corresponding author for this work

Research output: Contribution to journalReview articleAcademicpeer-review

6 Citations (Scopus)
91 Downloads (Pure)

Abstract

Aluminum oxide (Al2O3) is an emerging material in integrated photonics. It exhibits a very broad transparency window from the UV to the mid-IR, very low propagation losses and a high solubility for rare-earth ions leading to optical gain in different spectral ranges. Al2O3 can be deposited by different wafer-level deposition techniques, including atomic layer deposition and reactive magnetron sputtering, being compatible with the monolithic integration onto passive integrated photonics platforms, such as Si3N4, to which it provides optical amplification and lasing. When deposited at low temperatures, it is also compatible with integration onto CMOS chips. In this review, the state-of-the-art on the deposition, integration and device development in this photonic platform is described.
Original languageEnglish
Article number1833753
Number of pages24
JournalAdvances in Physics: X
Volume6
Issue number1
Early online date14 Dec 2020
DOIs
Publication statusPublished - 1 Jan 2021

Keywords

  • Al O
  • Integrated photonics
  • aluminum oxide
  • on-chip amplifier
  • on-chip laser
  • rare-earth ions

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