Rare-earth-ion-doped Al2O3 for integrated optical amplification

Kerstin Worhoff, J. Bradley, L. Agazzi, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. 170 Gbit/s high-speed data amplification was demonstrated in an Al2O3:Er3+ channel waveguide with open eye diagrams and without penalty. A lossless 1x2 power splitter has been realized in Al2O3:Er3+ with net gain over a wavelength range of 40 nm (1525-1565 nm) across the complete telecom C-band.
    Original languageEnglish
    Title of host publicationPhotonics West
    EditorsJ.E. Broquin, C.M. Greiner
    Place of PublicationBellingham, WA, USA
    PublisherSPIE - The International Society for Optical Engineering
    Number of pages8
    ISBN (Print)9780819480002
    Publication statusPublished - Feb 2010
    EventSPIE Photonics West 2010: Connecting minds for global solutions - The Moscone Center, San Francisco, United States
    Duration: 23 Jan 201028 Jan 2010

    Publication series

    NameProceedings of the SPIE
    PublisherSPIE, the international Society for Optical Engineering
    ISSN (Print)0277-786X


    ConferenceSPIE Photonics West 2010
    Country/TerritoryUnited States
    CitySan Francisco


    • IR-70510
    • METIS-276018
    • optical gain
    • Rare-earth-ion doping
    • Erbium
    • high-speed amplification
    • Channel waveguide
    • IOMS-APD: Active Photonic Devices
    • EWI-17679
    • zero-loss power splitter
    • EC Grant Agreement nr.: FP6/017501
    • Aluminum oxide


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