Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices

J. Bradley, F. Ay, Tom Blauwendraat, Kerstin Worhoff, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been deposited. In order to define channel waveguides in such $Al_2O_3$ films, the etching behaviour of $Al_2O_3$ has been investigated using an inductively coupled reactive ion etch system. The etch rate of $Al_2O_3$ and possible mask materials was studied by applying various common process gases and combinations of these gases, including $CF_4/O_2, BCl_3, BCl_3/HBr$ and $Cl_2$. Based on a comparison of the etch rates and patterning feasibility of the different mask materials, a $BCl_3/HBr$ plasma and and standard resist mask were used to fabricate channel waveguide structures. The etched structures exhibit straight sidewalls with minimal roughness and etch depths of up to 530 nm, sufficient for defining waveguides with strong optical confinement and low bending losses. Low additional propagation losses were measured in single-mode $Al_2O_3$ ridge waveguides defined using the developed etch process. In initial investigations, $Al_2O_3:Er$ layers fabricated using the same deposition method applied for the undoped layers show typical emission cross-sections, low green upconversion luminescence and lifetimes up to 7 ms.
Original languageUndefined
Title of host publicationProceedings International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems
EditorsValentin A. Orlovic, Vladislav Panchenko, Ivan A. Scherbakov
Place of PublicationBellingham, Washington, U.S.A.
PublisherSPIE International
Pages-
Number of pages8
DOIs
Publication statusPublished - 9 Aug 2007

Publication series

NameProceedings of SPIE
PublisherSPIE International
Number67310A
Volume6731
ISSN (Print)0277-786X

Keywords

  • IOMS-APD: Advanced Photonic Devices
  • IR-62073
  • METIS-245881
  • EWI-11615
  • EC Grant Agreement nr.: FP6/017501

Cite this

Bradley, J., Ay, F., Blauwendraat, T., Worhoff, K., & Pollnau, M. (2007). Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices. In V. A. Orlovic, V. Panchenko, & I. A. Scherbakov (Eds.), Proceedings International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems (pp. -). [10.1117/12.751890] (Proceedings of SPIE; Vol. 6731, No. 67310A). Bellingham, Washington, U.S.A.: SPIE International. https://doi.org/10.1117/12.751890
Bradley, J. ; Ay, F. ; Blauwendraat, Tom ; Worhoff, Kerstin ; Pollnau, Markus. / Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices. Proceedings International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems. editor / Valentin A. Orlovic ; Vladislav Panchenko ; Ivan A. Scherbakov. Bellingham, Washington, U.S.A. : SPIE International, 2007. pp. - (Proceedings of SPIE; 67310A).
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abstract = "Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been deposited. In order to define channel waveguides in such $Al_2O_3$ films, the etching behaviour of $Al_2O_3$ has been investigated using an inductively coupled reactive ion etch system. The etch rate of $Al_2O_3$ and possible mask materials was studied by applying various common process gases and combinations of these gases, including $CF_4/O_2, BCl_3, BCl_3/HBr$ and $Cl_2$. Based on a comparison of the etch rates and patterning feasibility of the different mask materials, a $BCl_3/HBr$ plasma and and standard resist mask were used to fabricate channel waveguide structures. The etched structures exhibit straight sidewalls with minimal roughness and etch depths of up to 530 nm, sufficient for defining waveguides with strong optical confinement and low bending losses. Low additional propagation losses were measured in single-mode $Al_2O_3$ ridge waveguides defined using the developed etch process. In initial investigations, $Al_2O_3:Er$ layers fabricated using the same deposition method applied for the undoped layers show typical emission cross-sections, low green upconversion luminescence and lifetimes up to 7 ms.",
keywords = "IOMS-APD: Advanced Photonic Devices, IR-62073, METIS-245881, EWI-11615, EC Grant Agreement nr.: FP6/017501",
author = "J. Bradley and F. Ay and Tom Blauwendraat and Kerstin Worhoff and Markus Pollnau",
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Bradley, J, Ay, F, Blauwendraat, T, Worhoff, K & Pollnau, M 2007, Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices. in VA Orlovic, V Panchenko & IA Scherbakov (eds), Proceedings International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems., 10.1117/12.751890, Proceedings of SPIE, no. 67310A, vol. 6731, SPIE International, Bellingham, Washington, U.S.A., pp. -. https://doi.org/10.1117/12.751890

Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices. / Bradley, J.; Ay, F.; Blauwendraat, Tom; Worhoff, Kerstin; Pollnau, Markus.

Proceedings International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems. ed. / Valentin A. Orlovic; Vladislav Panchenko; Ivan A. Scherbakov. Bellingham, Washington, U.S.A. : SPIE International, 2007. p. - 10.1117/12.751890 (Proceedings of SPIE; Vol. 6731, No. 67310A).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices

AU - Bradley, J.

AU - Ay, F.

AU - Blauwendraat, Tom

AU - Worhoff, Kerstin

AU - Pollnau, Markus

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PY - 2007/8/9

Y1 - 2007/8/9

N2 - Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been deposited. In order to define channel waveguides in such $Al_2O_3$ films, the etching behaviour of $Al_2O_3$ has been investigated using an inductively coupled reactive ion etch system. The etch rate of $Al_2O_3$ and possible mask materials was studied by applying various common process gases and combinations of these gases, including $CF_4/O_2, BCl_3, BCl_3/HBr$ and $Cl_2$. Based on a comparison of the etch rates and patterning feasibility of the different mask materials, a $BCl_3/HBr$ plasma and and standard resist mask were used to fabricate channel waveguide structures. The etched structures exhibit straight sidewalls with minimal roughness and etch depths of up to 530 nm, sufficient for defining waveguides with strong optical confinement and low bending losses. Low additional propagation losses were measured in single-mode $Al_2O_3$ ridge waveguides defined using the developed etch process. In initial investigations, $Al_2O_3:Er$ layers fabricated using the same deposition method applied for the undoped layers show typical emission cross-sections, low green upconversion luminescence and lifetimes up to 7 ms.

AB - Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been deposited. In order to define channel waveguides in such $Al_2O_3$ films, the etching behaviour of $Al_2O_3$ has been investigated using an inductively coupled reactive ion etch system. The etch rate of $Al_2O_3$ and possible mask materials was studied by applying various common process gases and combinations of these gases, including $CF_4/O_2, BCl_3, BCl_3/HBr$ and $Cl_2$. Based on a comparison of the etch rates and patterning feasibility of the different mask materials, a $BCl_3/HBr$ plasma and and standard resist mask were used to fabricate channel waveguide structures. The etched structures exhibit straight sidewalls with minimal roughness and etch depths of up to 530 nm, sufficient for defining waveguides with strong optical confinement and low bending losses. Low additional propagation losses were measured in single-mode $Al_2O_3$ ridge waveguides defined using the developed etch process. In initial investigations, $Al_2O_3:Er$ layers fabricated using the same deposition method applied for the undoped layers show typical emission cross-sections, low green upconversion luminescence and lifetimes up to 7 ms.

KW - IOMS-APD: Advanced Photonic Devices

KW - IR-62073

KW - METIS-245881

KW - EWI-11615

KW - EC Grant Agreement nr.: FP6/017501

U2 - 10.1117/12.751890

DO - 10.1117/12.751890

M3 - Conference contribution

T3 - Proceedings of SPIE

SP - -

BT - Proceedings International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems

A2 - Orlovic, Valentin A.

A2 - Panchenko, Vladislav

A2 - Scherbakov, Ivan A.

PB - SPIE International

CY - Bellingham, Washington, U.S.A.

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Bradley J, Ay F, Blauwendraat T, Worhoff K, Pollnau M. Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices. In Orlovic VA, Panchenko V, Scherbakov IA, editors, Proceedings International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems. Bellingham, Washington, U.S.A.: SPIE International. 2007. p. -. 10.1117/12.751890. (Proceedings of SPIE; 67310A). https://doi.org/10.1117/12.751890