Rare-earth-ion doped amplifiers and lasers integrated on silicon

Kerstin Worhoff, Edward Bernhardi, J. Bradley, J. Yang, L. Agazzi, F. Ay, R.M. de Ridder, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    Silicon-compatible rare-earth-ion doped Al2O3 thin-film technology is optimized with respect to fabrication reliability, optical loss and gain performance. Net gain is demonstrated in the 0.88, 1.0, 1.3 and 1.5-μm wavelength ranges upon doping of the host material with Nd3+, Yb3+ or Er3+. On-chip devices realized and tested are, among others, a high-speed (170-Gbit/s) amplifier for C-band operation, an amplifier for integration into an optical backplane, a highly efficient (67% slope) waveguide laser with on-chip integrated Bragg gratings and a narrow-linewidth (1.7 kHz) distributed feedback laser.
    Original languageUndefined
    Title of host publication13th International Conference on Transparent Optical Networks, ICTON 2011
    PublisherIEEE
    Pages1-4
    Number of pages4
    ISBN (Print)978-1-4577-0882-4
    DOIs
    Publication statusPublished - 26 Jun 2011
    Event13th International Conference on Transparent Optical Networks, ICTON 2011 - Stockholm, Sweden
    Duration: 26 Jun 201130 Jun 2011
    Conference number: 13

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference13th International Conference on Transparent Optical Networks, ICTON 2011
    Abbreviated titleICTON
    CountrySweden
    CityStockholm
    Period26/06/1130/06/11

    Keywords

    • METIS-281556
    • Integrated Optics
    • DFB laser
    • Aluminium oxide
    • IR-78637
    • EC Grant Agreement nr.: FP6/017501
    • high-speed amplifier
    • Rare-earth-ion doping
    • IOMS-APD: Active Photonic Devices
    • EWI-20785
    • reactive co-sputtering

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