Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics

Sonia Maria García Blanco, D. Geskus, Koop van Dalfsen, S. Aravazhi, Markus Pollnau

    Research output: Contribution to conferencePaper

    Abstract

    In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.
    Original languageUndefined
    Pages69-70
    Number of pages2
    Publication statusPublished - Jul 2011
    Event8th International Symposium on Modern Optics and Its Applications, ISMOA 2011 - Bandung Institute of Technology, Bandung, Indonesia
    Duration: 4 Jul 20117 Jul 2011
    Conference number: 8

    Other

    Other8th International Symposium on Modern Optics and Its Applications, ISMOA 2011
    Abbreviated titleISMOA
    CountryIndonesia
    CityBandung
    Period4/07/117/07/11

    Keywords

    • EWI-21375
    • IOMS-APD: Active Photonic Devices
    • IR-79623
    • METIS-285054

    Cite this

    García Blanco, S. M., Geskus, D., van Dalfsen, K., Aravazhi, S., & Pollnau, M. (2011). Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics. 69-70. Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia.