In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.
|Number of pages||2|
|Publication status||Published - Jul 2011|
|Event||8th International Symposium on Modern Optics and Its Applications, ISMOA 2011 - Bandung Institute of Technology, Bandung, Indonesia|
Duration: 4 Jul 2011 → 7 Jul 2011
Conference number: 8
|Other||8th International Symposium on Modern Optics and Its Applications, ISMOA 2011|
|Period||4/07/11 → 7/07/11|
- IOMS-APD: Active Photonic Devices
García Blanco, S. M., Geskus, D., van Dalfsen, K., Aravazhi, S., & Pollnau, M. (2011). Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics. 69-70. Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia.