Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics

Sonia Maria García Blanco, D. Geskus, Koop van Dalfsen, S. Aravazhi, Markus Pollnau

    Research output: Contribution to conferencePaper

    Abstract

    In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.
    Original languageUndefined
    Pages69-70
    Number of pages2
    Publication statusPublished - Jul 2011
    Event8th International Symposium on Modern Optics and Its Applications, ISMOA 2011 - Bandung Institute of Technology, Bandung, Indonesia
    Duration: 4 Jul 20117 Jul 2011
    Conference number: 8

    Other

    Other8th International Symposium on Modern Optics and Its Applications, ISMOA 2011
    Abbreviated titleISMOA
    CountryIndonesia
    CityBandung
    Period4/07/117/07/11

    Keywords

    • EWI-21375
    • IOMS-APD: Active Photonic Devices
    • IR-79623
    • METIS-285054

    Cite this

    García Blanco, S. M., Geskus, D., van Dalfsen, K., Aravazhi, S., & Pollnau, M. (2011). Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics. 69-70. Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia.
    García Blanco, Sonia Maria ; Geskus, D. ; van Dalfsen, Koop ; Aravazhi, S. ; Pollnau, Markus. / Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics. Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia.2 p.
    @conference{073d157f851444808ad642f61f01231a,
    title = "Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics",
    abstract = "In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 {\%}) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.",
    keywords = "EWI-21375, IOMS-APD: Active Photonic Devices, IR-79623, METIS-285054",
    author = "{Garc{\'i}a Blanco}, {Sonia Maria} and D. Geskus and {van Dalfsen}, Koop and S. Aravazhi and Markus Pollnau",
    year = "2011",
    month = "7",
    language = "Undefined",
    pages = "69--70",
    note = "null ; Conference date: 04-07-2011 Through 07-07-2011",

    }

    García Blanco, SM, Geskus, D, van Dalfsen, K, Aravazhi, S & Pollnau, M 2011, 'Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics' Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia, 4/07/11 - 7/07/11, pp. 69-70.

    Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics. / García Blanco, Sonia Maria; Geskus, D.; van Dalfsen, Koop; Aravazhi, S.; Pollnau, Markus.

    2011. 69-70 Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia.

    Research output: Contribution to conferencePaper

    TY - CONF

    T1 - Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics

    AU - García Blanco, Sonia Maria

    AU - Geskus, D.

    AU - van Dalfsen, Koop

    AU - Aravazhi, S.

    AU - Pollnau, Markus

    PY - 2011/7

    Y1 - 2011/7

    N2 - In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.

    AB - In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.

    KW - EWI-21375

    KW - IOMS-APD: Active Photonic Devices

    KW - IR-79623

    KW - METIS-285054

    M3 - Paper

    SP - 69

    EP - 70

    ER -

    García Blanco SM, Geskus D, van Dalfsen K, Aravazhi S, Pollnau M. Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics. 2011. Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia.