Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics

Sonia Maria García Blanco; D. Geskus; Koop van Dalfsen; S. Aravazhi; Markus Pollnau

Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics

Sonia Maria García Blanco, D. Geskus, Koop van Dalfsen, S. Aravazhi, Markus Pollnau

Research output: Contribution to conference › Paper

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Abstract

In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.

Original language	Undefined
Pages	69-70
Number of pages	2
Publication status	Published - Jul 2011
Event	8th International Symposium on Modern Optics and Its Applications, ISMOA 2011 - Bandung Institute of Technology, Bandung, Indonesia Duration: 4 Jul 2011 → 7 Jul 2011 Conference number: 8

Other

Other	8th International Symposium on Modern Optics and Its Applications, ISMOA 2011
Abbreviated title	ISMOA
Country/Territory	Indonesia
City	Bandung
Period	4/07/11 → 7/07/11

Keywords

EWI-21375
IOMS-APD: Active Photonic Devices
IR-79623
METIS-285054

Access to Document

http://eprints.eemcs.utwente.nl/secure2/21375/01/Published_manuscript.pdf

Cite this

García Blanco, S. M., Geskus, D., van Dalfsen, K., Aravazhi, S., & Pollnau, M. (2011). Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics. 69-70. Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia. http://eprints.eemcs.utwente.nl/secure2/21375/01/Published_manuscript.pdf

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title = "Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics",

abstract = "In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.",

keywords = "EWI-21375, IOMS-APD: Active Photonic Devices, IR-79623, METIS-285054",

author = "{Garc{\'i}a Blanco}, {Sonia Maria} and D. Geskus and {van Dalfsen}, Koop and S. Aravazhi and Markus Pollnau",

year = "2011",

month = jul,

language = "Undefined",

pages = "69--70",

note = "8th International Symposium on Modern Optics and Its Applications, ISMOA 2011 ; Conference date: 04-07-2011 Through 07-07-2011",

}

García Blanco, SM, Geskus, D, van Dalfsen, K, Aravazhi, S & Pollnau, M 2011, 'Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics', Paper presented at 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, Bandung, Indonesia, 4/07/11 - 7/07/11 pp. 69-70. <http://eprints.eemcs.utwente.nl/secure2/21375/01/Published_manuscript.pdf>

TY - CONF

T1 - Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics

AU - García Blanco, Sonia Maria

AU - Geskus, D.

AU - van Dalfsen, Koop

AU - Aravazhi, S.

AU - Pollnau, Markus

N1 - Conference code: 8

PY - 2011/7

Y1 - 2011/7

N2 - In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.

AB - In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.

KW - EWI-21375

KW - IOMS-APD: Active Photonic Devices

KW - IR-79623

KW - METIS-285054

M3 - Paper

SP - 69

EP - 70

T2 - 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011

Y2 - 4 July 2011 through 7 July 2011

ER -